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  • BS170-D75Z

BS170-D75Z

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Manufacturer No:

BS170-D75Z

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BS170-D75Z

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

BS170-D75Z

Description:

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Quantity:

In Stock : 999

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Product Details

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BS170-D75Z Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 40pF @ 10V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

BS170-D75Z Features


a 60V drain to source voltage (Vdss)

BS170-D75Z Applications


There are a lot of ON Semiconductor BS170-D75Z applications of single MOSFETs transistors.

  • DC-to-DC converters
  • General Purpose Interfacing Switch
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Load switching
  • LCD/LED/ PDP TV Lighting
  • Consumer Appliances
  • Motor drives and Uninterruptible Power Supplies
  • Power Management Functions
  • Motor control
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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BS170-D75Z

technical specifications, attributes, parameters and parts with similar specifications to BS170-D75Z.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    11 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Surface Mount

    NO

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Box (TB)

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Base Part Number

    BS170

  • JESD-30 Code

    O-PBCY-T3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    830mW Ta

  • Operating Mode

    ENHANCEMENT MODE

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    5 Ω @ 200mA, 10V

  • Vgs(th) (Max) @ Id

    3V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    40pF @ 10V

  • Current - Continuous Drain (Id) @ 25°C

    500mA Ta

  • Drain to Source Voltage (Vdss)

    60V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Drain Current-Max (Abs) (ID)

    0.5A

  • Drain-source On Resistance-Max

    5Ohm

  • DS Breakdown Voltage-Min

    60V

  • Feedback Cap-Max (Crss)

    10 pF

  • RoHS Status

    ROHS3 Compliant

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