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BFN18H6327XTSA1
BFN18H6327XTSA1
376-BFN18H6327XTSA1
TO-243AA
BFN18H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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BFN18H6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 70MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 300V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BFN18H6327XTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz
BFN18H6327XTSA1 Applications
There are a lot of Infineon Technologies BFN18H6327XTSA1 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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BFN18H6327XTSA1
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