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BCW68FE6327HTSA1
BCW68FE6327HTSA1
376-BCW68FE6327HTSA1
TO-236-3, SC-59, SOT-23-3
BCW68FE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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BCW68FE6327HTSA1 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 2V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.In this part, there is a transition frequency of 200MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW68FE6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68FE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW68FE6327HTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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BCW68FE6327HTSA1
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