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BC857CE6327HTSA1
BC857CE6327HTSA1
376-BC857CE6327HTSA1
TO-236-3, SC-59, SOT-23-3
BC857CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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BC857CE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 650mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 250MHz.As a result, it can handle voltages as low as 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC857CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857CE6327HTSA1 Applications
There are a lot of Infineon Technologies BC857CE6327HTSA1 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
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BC857CE6327HTSA1
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