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BCX5316E6433HTMA1
BCX5316E6433HTMA1
376-BCX5316E6433HTMA1
TO-243AA
BCX5316E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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BCX5316E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 125MHz.A maximum collector current of 1A volts is possible.
BCX5316E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCX5316E6433HTMA1 Applications
There are a lot of Infineon Technologies BCX5316E6433HTMA1 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
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