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BC860CE6359HTMA1
BC860CE6359HTMA1
376-BC860CE6359HTMA1
TO-236-3, SC-59, SOT-23-3
BC860CE6359HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
BC860CE6359HTMA1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Supplier package SOT-23-3 contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC860CE6359HTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23-3
BC860CE6359HTMA1 Applications
There are a lot of Infineon Technologies BC860CE6359HTMA1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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BC860CE6359HTMA1
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