Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Number of Terminals | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MB85R256FPF-G-BNDE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tray | 2006 | Obsolete | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 28 | 28-SOIC (0.342, 8.69mm Width) | Parallel | 3.6V | Unknown | 2.7V | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 28-SOP | 150ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | FRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
602-00001 | Parallax Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Tube | 2007 | Obsolete | 1 (Unlimited) | 70°C | 0°C | RoHS Compliant | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 400kHz | Through Hole | 0°C~70°C TA | EEPROM | 8-DIP | 900ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67603S150BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2009 | yes | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | PIPELINED ARCHITECTURE | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 13mm | 1.2mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | COMMERCIAL | YES | SRAMs | 3-STATE | 3.8 ns | 150MHz | 1.1MB | RAM, SDR, SRAM | 18b | 0.305mA | 256KX36 | 0.05A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "71V416L10PHG8") |
71V416L10PHG8 | Integrated Device Technology Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | 3 (168 Hours) | 3A991.B.2.A | 18.41mm | RoHS Compliant | compliant | 10.16mm | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 3V | 70°C | SRAMs | Not Qualified | 3.3V | 3.6V | 44 | 3-STATE | 0.18mA | 256KX16 | 16 | 4194304 bit | STANDARD SRAM | PARALLEL | 0.01A | 10 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M64D4NZ-046 WT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 376-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS512SDSNFI011 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | FS-S | Active | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X1 | 8-WDFN Exposed Pad | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 1.7V | 2V | 512Mb 64M x 8 | Non-Volatile | 1.7V~2V | 128MX4 | 4 | 536870912 bit | SERIAL | 80MHz | 2 | 1.8V | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AK93C75AV | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | Obsolete | 1 (Unlimited) | Surface Mount | -40°C~85°C TA | EEPROM | 8-TSSOP | 8Kb 512 x 16 | Non-Volatile | 1.8V~5.5V | EEPROM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK93C65CF | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | -40°C~85°C TA | EEPROM | 4Kb 256 x 16 | Non-Volatile | 1.5V~5.5V | 4MHz | EEPROM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V65603S150BGG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 119-PBGA (14x22) | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V07S35J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V07 | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS42S32200E-7BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 90 | 3.3V | RoHS Compliant | 90 | 90-TFBGA | 64 Mb | Surface Mount | -40°C~85°C TA | SDRAM | 140mA | BOTTOM | 3.3V | 0.8mm | Not Qualified | 3-STATE | 5.5ns | 64Mb 2M x 32 | Volatile | 13b | 3V~3.6V | 2MX32 | 32 | 32b | 143MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA20PHGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 32-SOIC (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V124 | 32-TSOP II | 20ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C136-55NC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-QFP | unknown | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160B-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 70°C | 0°C | RoHS Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 166MHz | Surface Mount | 0°C~70°C TA | SDRAM | 166MHz | 54-TSOP II | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16b | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025L20J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV0108ESN-7SR#S0 | Renesas Electronics America | 5.2612 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2013 | yes | Obsolete | 1 (Unlimited) | 32 | ROHS3 Compliant | 32-SOIC (0.450, 11.40mm Width) | Surface Mount | 0°C~70°C TA | CMOS | ASYNCHRONOUS | DUAL | 32 | YES | 1.27mm | R-PDSO-G32 | Not Qualified | 3/3.3V | 3-STATE | 1Mb 128K x 8 | Volatile | 0.025mA | 2.7V~3.6V | 128KX8 | 8 | 1048576 bit | 0.000002A | 70 ns | COMMON | 2V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7130SA55C | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2005 | Active | 70°C | 0°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | DIP | Parallel | 5.5V | 4.5V | 8 kb | 15.24mm | 3.3mm | 155mA | 55 ns | 1kB | RAM, SDR, SRAM | 10b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V432S5PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2013 | yes | Discontinued | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.63V | 3.135V | 1 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 128kB | RAM, SDR, SRAM | 15b | 32KX32 | Synchronous | 32b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT25640VI-GT3 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | 8 | 100 YEAR DATA RETENTION | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | CAT25640 | 8 | YES | 1.27mm | Not Qualified | 2/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 1.8V~5.5V | 8 | 65536 bit | SERIAL | 20MHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S26KS256SDGBHM030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2016 | Automotive, AEC-Q100, HyperFlash™ KS | yes | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-VBGA | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.7V | 1.95V | 96ns | AEC-Q100; TS 16949 | 256Mb 32M x 8 | Non-Volatile | 1.7V~1.95V | 32MX8 | 8 | 268435456 bit | 133MHz | 1.8V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F400B5WP-8 T TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2002 | Obsolete | 2 (1 Year) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NOR | MT28F400B5 | 48-TSOP I | 80ns | 4Mb 512K x 8 256K x 16 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 80ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND256W3A0AN6E | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | 48 | 3A991.B.1.A | 18.4mm | Non-RoHS Compliant | Contains Lead | 48 | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3/e6 | TIN/TIN BISMUTH | DUAL | 260 | 3V | NOT SPECIFIED | NAND256 | 48 | YES | 0.5mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 32MX8 | 8 | 268435456 bit | 8b | 0.00005A | 35 ns | 3V | NO | NO | YES | 2K | 512words | YES | FLASH | Parallel | 50ns | 16K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLC18160-25BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 400MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 0.97mA | 1.7V~1.9V | 16MX18 | 18 | 301989888 bit | 18b | COMMON | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B384M64D4NH-062 WT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 272-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 384M x 64 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT27C512R-12RI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.342, 8.69mm Width) | Surface Mount | -40°C~85°C TC | EPROM - OTP | AT27C512 | 120ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F320J3FS-11 GMET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2005 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 64-FBGA | Surface Mount | -40°C~85°C TA | FLASH | MT28F320J3 | 64-FBGA (10x13) | 110ns | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7130LA55CB | Integrated Device Technology Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree no | 1 (Unlimited) | 3A001.A.2.C | 2 | 60.96mm | Non-RoHS Compliant | not_compliant | 15.24mm | CMOS | ASYNCHRONOUS | 4.826mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 240 | 5V | NOT SPECIFIED | 48 | MILITARY | NO | 2.54mm | R-CDIP-T48 | 4.5V | 125°C | -55°C | SRAMs | Not Qualified | 5V | 5.5V | 48 | 3-STATE | MIL-PRF-38535 | 0.14mA | 1KX8 | 8 | 8192 bit | DUAL-PORT SRAM | PARALLEL | 0.004A | 55 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NM24C03EN | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | NM24C03 | 3.5μs | 2Kb 256 x 8 | Non-Volatile | 4.5V~5.5V | 100kHz | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT25QL256ABA1EW9-0SIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | 2016 | Active | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | 8-WFDFN Exposed Pad | 800μm | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 85°C | 7 ns | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 256MX1 | 1 | 268435456 bit | SERIAL | 133MHz | 3V | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RMLV0816BGSA-4S2#KA0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | 2015 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | 48 | 8Mb 1M x 8 512K x 16 | Volatile | 2.4V~3.6V | SRAM | Parallel | 45ns |
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71V67603S150BQG8 Integrated Device Technology (IDT)
165 Pin Memory IC 9 Mb kb 15mm mm
Price: 0.0000
RFQ -
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IS42S32200E-7BLI-TR ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 64 Mb kb 140mA mA
Price: 0.0000
RFQ -
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7025L20J Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 240mA mA 16b b
Price: 0.0000
RFQ -
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7130SA55C Integrated Device Technology (IDT)
Through Hole Memory IC 8 kb kb 61.72mm mm 155mA mA 8b b
Price: 0.0000
RFQ -
71V432S5PFG Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 1 Mb kb 20mm mm 200mA mA 32b b
Price: 0.0000
RFQ -
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S26KS256SDGBHM030 Cypress Semiconductor Corp
Automotive, AEC-Q100, HyperFlash™ KS Memory IC Automotive, AEC-Q100, HyperFlash™ KS Series 8mm mm
Price: 0.0000
RFQ -
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IS49NLC18160-25BLI ISSI, Integrated Silicon Solution Inc
1.5/1.81.82.5V V 144 Pin Memory IC 18.5mm mm
Price: 0.0000
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