Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS61DDB42M18C-250M3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | Non-RoHS Compliant | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | 1.8V | YES | 1mm | R-PBGA-B165 | 1.71V | 1.89V | 8.4ns | 36Mb 2M x 18 | Volatile | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DF011-MAHNHR-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | Gold | 8 | 8-UFDFN Exposed Pad | SPI, Serial | 1 Mb | Surface Mount | -40°C~125°C TC | CMOS | SYNCHRONOUS | 1 | DUAL | 1.7V | 3.6V | 8 ns | 1Mb 128K x 8 | Non-Volatile | 1.7V~3.6V | 1MX1 | 1 | 104MHz | 256B | FLASH | SPI | 12μs, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT28C16AL20 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2009 | Obsolete | 1 (Unlimited) | 24 | EAR99 | RoHS Compliant | 100 YEAR DATA RETENTION | 24-DIP (0.600, 15.24mm) | compliant | Through Hole | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | 260 | 5V | NOT SPECIFIED | CAT28C16A | 24 | NO | 2.54mm | R-PDIP-T24 | 4.5V | Not Qualified | 5V | 5.5V | 200ns | 16Kb 2K x 8 | Non-Volatile | 0.035mA | 4.5V~5.5V | 2KX8 | 8 | 16384 bit | 0.0001A | 10000 Write/Erase Cycles | 10ms | 5V | YES | NO | NO | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7006L35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 35 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66BX-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 4 kb | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | DUAL | 260 | 3V | 40 | 93LC66B | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 256X16 | 16 | 2MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D512M64D4BP-046 WT ES:E TR") |
MT53D512M64D4BP-046 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS8C403625-QC75N | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2005 | yes | Active | 3 (168 Hours) | 100 | 3.3V | 2 | ROHS3 Compliant | Lead Free | 100 | FLOW THROUGH | 100-LQFP | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | Not Qualified | 3.465V | 3-STATE | 7.5ns | 4Mb 128K x 36 | Volatile | 18b | 3.135V~3.465V | 36 | 117MHz | 0.03A | COMMON | 3.14V | SRAM | Parallel | 8.5ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
W632GU8MB11I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 78 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-VFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B78 | 1.283V | 1.45V | 20ns | 2Gb 256M x 8 | Volatile | 1.283V~1.45V | 256MX8 | 8 | 2147483648 bit | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVE4M16ALL-70BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | 48 | 1.8V | 1 | ROHS3 Compliant | No | 48 | 48-TFBGA | 64 Mb | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | BOTTOM | 1.8V | YES | 0.75mm | Other Memory ICs | 3-STATE | 64Mb 4M x 16 | Volatile | 22b | 0.03mA | 1.7V~1.95V | 16 | 70 ns | COMMON | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G128FVT-3AGE2 | ROHM Semiconductor | 0.5739 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 128 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | BR24G128 | 0.65mm | 1.7V | 5.5V | 450 ns | 128Kb 16K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS62WV25616DBLL-45BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | no | Discontinued | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | 48 | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | 48 | YES | 0.75mm | 2.3V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 0.018mA | 2.3V~3.6V | 256KX16 | 16 | 4194304 bit | 0.000007A | 45 ns | COMMON | 1.2V | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V3319S166BFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3319 | 3.6ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46H4M32LFB5-5 IT:K TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2012 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 90-VFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | MT46H4M32 | 5ns | 128Mb 4M x 32 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29AL008J55TFNR20 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | AL-J | Active | 3 (168 Hours) | 48 | EAR99 | 3.3V | 18.4mm | ROHS3 Compliant | No | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 8 Mb | 12mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 3.3V | YES | 0.5mm | 3V | 3.6V | 8Mb 1M x 8 512K x 16 | Non-Volatile | 0.012mA | 3V~3.6V | 512KX16 | 16 | 0.000005A | 55 ns | 8 | 3V | YES | YES | YES | 12115 | YES | YES | FLASH | Parallel | 55ns | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256SA15YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | no | 28 | EAR99 | 85°C | -40°C | 1 | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | J BEND | 225 | 5V | 30 | 28 | INDUSTRIAL | YES | 1.27mm | 4.5V | Not Qualified | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 32KX8 | 8 | 262144 bit | 15 ns | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP51218B-200TQLI | ISSI, Integrated Silicon Solution Inc | 12.8010 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.65mm | R-PQFP-G100 | 3.135V | 3.465V | 3.1ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 512KX18 | 18 | 9437184 bit | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
25LC160CT-E/SN16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 4.9mm | 8-SOIC (0.154, 3.90mm Width) | compliant | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | 5V | 25LC160C | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA10PHG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | yes | Active | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | 18.41mm | RoHS Compliant | Lead Free | No | 44 | TSOP | Parallel | 3.6V | 3.15V | 1 Mb | 10.16mm | 1mm | CMOS | 1 | 160mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 10 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S70FL01GSAGMFA013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.71 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 128MX8 | 8 | 1073741824 bit | SERIAL | 133MHz | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256-90TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tray | 1997 | Active | 3 (168 Hours) | 28 | EAR99 | 5V | 11.8mm | ROHS3 Compliant | Lead Free | Tin | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | 256 kb | 90GHz | 8mm | Surface Mount | -40°C~85°C TC | CMOS | 1.2mm | 8542.32.00.51 | 1 | 80mA | e3 | DUAL | 5V | AT28HC256 | 0.55mm | 5V | 90ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 64words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q128FVCJQ | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | SpiFlash® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O, QPI | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT48V4M32LFF5-8:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2007 | Obsolete | 2 (1 Year) | 90 | EAR99 | 2.5V | 1 | 13mm | Non-RoHS Compliant | Contains Lead | 90 | AUTO/SELF REFRESH | 90-VFBGA | not_compliant | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | 8542.32.00.24 | 1 | 115mA | e0 | TIN LEAD SILVER | BOTTOM | 235 | 2.5V | 30 | MT48V4M32 | 90 | 0.8mm | 2.3V | Not Qualified | 2.7V | 3-STATE | 7ns | 128Mb 4M x 32 | Volatile | 14b | 2.3V~2.7V | 8MX32 | 32 | 125MHz | 0.00045A | COMMON | 4096 | DRAM | Parallel | 15ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL064LABNFB011 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tube | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 8 | 4mm | ROHS3 Compliant | IT ALSO HAVE X1 MEMORY WIDTH | 8-WFDFN Exposed Pad | 4mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.6mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.8mm | S-PDSO-N8 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 16MX4 | 4 | 67108864 bit | SERIAL | 108MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256TTSA12Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2010 | yes | 28 | EAR99 | 70°C | 0°C | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | J BEND | 260 | 5V | 30 | 28 | COMMERCIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 32KX8 | 8 | 262144 bit | 0.015A | 12 ns | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SAGBHVC10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 24-TBGA | SPI, Serial | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 0.061mA | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 133MHz | 0.0001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D8DAWF-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25L8036EM2I-08G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2017 | MX25xxx35/36 - MXSMIO™ | Obsolete | 8 | EAR99 | 5.28mm | RoHS Compliant | ALSO CONFIGURABLE AS 8M X 1 | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 8 | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 0.035mA | 2.7V~3.6V | 2MX4 | 4 | 8388608 bit | SERIAL | 133MHz | 0.00002A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI | 300μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1020B-12ZXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | unknown | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.194mm | 1 | e3 | TIN | DUAL | 260 | 5V | 20 | 44 | YES | 0.8mm | R-PDSO-G44 | 4.5V | COMMERCIAL | 5.5V | 512Kb 32K x 16 | Volatile | 4.5V~5.5V | 32KX16 | 16 | 524288 bit | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128P11FFIS40 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | GL-P | Active | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX25L8006EPI-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2011 | MX25xxx05/06 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.27mm | RoHS Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 5.33mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 8 | NO | 2.54mm | R-PDIP-T8 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 4MX2 | 2 | 8388608 bit | SERIAL | 86MHz | 0.00001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 50μs, 3ms |
-
-
-
-
7006L35PF Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 128 kb kb 14mm mm 210mA mA 8b b
Price: 0.0000
RFQ -
93LC66BX-E/SN Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 93LC66B 4 kb kb 4.9mm mm 2mA mA
Price: 0.0000
RFQ -
-
-
-
-
BR24G128FVT-3AGE2 ROHM Semiconductor
Surface Mount Memory IC BR24G128 128 kb kb 4.4mm mm
Price: 0.5739
RFQ -
IS62WV25616DBLL-45BI ISSI, Integrated Silicon Solution Inc
2.5/3.3V V 48 Pin Memory IC 8mm mm
Price: 0.0000
RFQ -
-
-
S29AL008J55TFNR20 Cypress Semiconductor Corp
AL-J Memory IC AL-J Series 8 Mb kb 18.4mm mm
Price: 0.0000
RFQ -
-
-
25LC160CT-E/SN16KVAO Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 25LC160C 4.9mm mm
Price: 0.0000
RFQ -
71V016SA10PHG Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 1 Mb kb 18.41mm mm 160mA mA 16b b
Price: 0.0000
RFQ -
S70FL01GSAGMFA013 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-S Memory IC Automotive, AEC-Q100, FL-S Series 10.3mm mm
Price: 0.0000
RFQ -
AT28HC256-90TU Microchip Technology
5V V Surface Mount Memory IC AT28HC256 256 kb kb 11.8mm mm 80mA mA
Price: 0.0000
RFQ -
-
MT48V4M32LFF5-8:G Micron Technology Inc.
Surface Mount 90 Pin Memory IC MT48V4M32 128 Mb kb 13mm mm 115mA mA
Price: 0.0000
RFQ -
S25FL064LABNFB011 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-L Memory IC Automotive, AEC-Q100, FL-L Series 4mm mm
Price: 0.0000
RFQ -
IDT71256TTSA12Y Integrated Device Technology (IDT)
5V V 28 Pin Memory IC 17.9324mm mm
Price: 0.0000
RFQ -
S25FL512SAGBHVC10 Cypress Semiconductor Corp
3/3.3V V FL-S Memory IC FL-S Series 8mm mm
Price: 0.0000
RFQ -
-
MX25L8036EM2I-08G Macronix
3/3.3V V MX25xxx35/36 - MXSMIO™ 8 Pin Memory IC MX25xxx35/36 - MXSMIO™ Series 5.28mm mm
Price: 0.0000
RFQ -
-
-
MX25L8006EPI-12G Macronix
3/3.3V V MX25xxx05/06 8 Pin Memory IC MX25xxx05/06 Series 9.27mm mm
Price: 0.0000
RFQ
Need Help?
