Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS42S32400F-6TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 86 | EAR99 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | No | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM | 1.2mm | 8542.32.00.02 | 1 | 150mA | e3 | Matte Tin (Sn) - annealed | DUAL | 3.3V | 86 | 0.5mm | 3V | 3.6V | 3-STATE | 5.4ns | 128Mb 4M x 32 | Volatile | 14b | 3V~3.6V | 4MX32 | 32 | 32b | 166MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA35P | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7130 | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA025E48-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 1 Weeks | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100KHZ AVAILABLE @1.7V | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | No SVHC | 2 kb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24AA025E48 | 8 | YES | 1.27mm | 900ns | TS 16949 | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V08L25PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 512 kb | 14mm | 1.4mm | 170mA | 25 ns | 64kB | RAM, SDR, SRAM | 32b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "93C86C-I/S15K") |
93C86C-I/S15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 93C86C | Die | 16Kb 2K x 8 1K x 16 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 2ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML08G101TFA000 | SkyHigh Memory Limited | 13.2726 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3V | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 85°C | -40°C | 3.6V | 1GX8 | 8 | 8589934592 bit | FLASH | PARALLEL | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLS96400-25BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 400MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 576Mb 64M x 9 | Volatile | 0.97mA | 1.7V~1.9V | 64MX9 | 9 | 603979776 bit | 9b | 0.048A | SEPARATE | DRAM | Parallel | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1EX25004ATA00I#S0 | Renesas Electronics America | 1.1500 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | 3.6V | R1EX25004 | 8 | YES | 0.65mm | 2.5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 4096 bit | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25L1006EMI-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2009 | MX25xxx05/06 | Not For New Designs | 3 (168 Hours) | 8 | 3.6V | 4.9mm | ROHS3 Compliant | Lead Free | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 1 Mb | 3.9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | MATTE TIN (800) | DUAL | 260 | 3.3V | 40 | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 3/3.3V | 1Mb 128K x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 512KX2 | 2 | 104MHz | 0.00001A | 1 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025L15J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7025 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FT24C32A-UMR-B | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tube | 2010 | Discontinued | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 1MHz | Surface Mount | -40°C~85°C | EEPROM | 8-MSOP | 700ns | 32Kb 4K x 8 | Non-Volatile | 1.8V~5.5V | 800kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MR4A08BYS35 | Everspin Technologies Inc. | 32.4152 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 2015 | yes | Active | 3 (168 Hours) | 44 | EAR99 | 3.3V | 18.41mm | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | 0°C~70°C TA | MRAM (Magnetoresistive RAM) | 100mA | ASYNCHRONOUS | 1.2mm | 8542.32.00.71 | 1 | 180mA | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | 0.8mm | 3V | Not Qualified | 3.6V | 16Mb 2M x 8 | Non-Volatile | 3V~3.6V | 2MX8 | 8 | 8b | 0.014A | 35 ns | 8b | RAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NDS36PT5-16ET | Insignis Technology Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM | 256Mb 16M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC02BT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC02B | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | OPEN-DRAIN | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXXR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | 0.2049 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2016 | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | 3.3V | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | SERIAL | 120MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 2.4ms | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM24CL16B-GTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | F-RAM™ | Active | 3 (168 Hours) | 8 | EAR99 | 3V | 4.9mm | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | 16 kb | 1.727mm | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1 | 300μA | e3 | DUAL | 260 | 3.3V | 30 | FM24CL16 | 8 | 1.27mm | 2.7V | 3.65V | 85°C | 550ns | 16Kb 2K x 8 | Non-Volatile | 2.7V~3.65V | 8 | 8b | 1MHz | 8b | FRAM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46DR16320C-3DBLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | 84 | AUTO/SELF REFRESH | 84-TFBGA | 512 Mb | Surface Mount | -40°C~105°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | 250mA | BOTTOM | 1.8V | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450ps | AEC-Q100 | 512Mb 32M x 16 | Volatile | 15b | 1.7V~1.9V | 32MX16 | 16 | 16b | 333MHz | 0.011A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM662GXC-BD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B116L-ZS25XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Surface Mount | Tray | 2014 | Active | 3 (168 Hours) | 44 | 3A991.B.2.B | 18.415mm | ROHS3 Compliant | Gold | 44 | 44-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.194mm | 8542.32.00.41 | 1 | 95mA | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 0.8mm | 2.7V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 2MX8 | 8 | 8b | 25 ns | 8b | NVSRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q256FVFIQ | Winbond Electronics Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7164S25DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2011 | no | Active | 1 (Unlimited) | 28 | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 64 kb | 15.24mm | 1.65mm | CMOS | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 240 | 5V | 28 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 13b | 8KX8 | 0.02A | 25 ns | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1258Y-100 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | no | Obsolete | 1 (Unlimited) | 40 | 3A991.B.2.A | 5V | Non-RoHS Compliant | Contains Lead | No | 40 | 10 YEAR DATA RETENTION | 40-DIP Module (0.610, 15.495mm) | 2 Mb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | DS1258Y | 40 | NO | 2.54mm | SRAMs | 5V | 2Mb 128K x 16 | Non-Volatile | 0.17mA | 4.5V~5.5V | 128KX16 | 16 | 16b | 0.01A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L10PHI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 85°C | -40°C | Non-RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256SA20TP | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | 2010 | 28 | EAR99 | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 28 | PDIP | Parallel | 5.5V | not_compliant | 4.5V | 256 kb | CMOS | 4.572mm | 1 | 145mA | e0 | DUAL | 225 | 5V | 30 | 28 | COMMERCIAL | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 20 ns | RAM, SRAM - Asynchronous | 15b | 32KX8 | 8 | Asynchronous | 8b | YES | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W800DB70N6E | Micron Technology Inc. | 0.9669 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2008 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | Tin | No | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | No SVHC | 8 Mb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | M29W800 | 48 | YES | 0.5mm | 3/3.3V | 2.7V | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | 512KX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 12115 | YES | YES | FLASH | Parallel | 70ns | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TH58NVG4S0HTA20 | Toshiba America Electronic Components | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | unknown | FLASH | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230AB-200IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2002 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | Non-RoHS Compliant | Contains Lead | No | 28 | 28-DIP Module (0.600, 15.24mm) | 256 kb | 200GHz | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | DS1230AB | 28 | NO | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 32KX8 | 8 | 8b | 0.005A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70914S25PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70914 | 80-TQFP (14x14) | 25ns | 36Kb 4K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS49NLC96400A-33WBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | AUTO REFRESH | 144-TBGA | 11mm | Surface Mount | 0°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B144 | 1.7V | 1.9V | 20ns | 576Mb 64M x 9 | Volatile | 1.7V~1.9V | 64MX9 | 9 | 603979776 bit | 300MHz | DRAM | Parallel |
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IS42S32400F-6TL ISSI, Integrated Silicon Solution Inc
Surface Mount 86 Pin Memory IC 128 Mb kb 22.22mm mm 150mA mA
Price: 0.0000
RFQ -
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24AA025E48-I/SN Microchip Technology
8 Pin Memory IC 24AA025E48 2 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
70V08L25PF Integrated Device Technology (IDT)
Surface Mount Memory IC 512 kb kb 14mm mm 170mA mA 8b b
Price: 0.0000
RFQ -
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IS49NLS96400-25BLI ISSI, Integrated Silicon Solution Inc
1.5/1.81.82.5V V 144 Pin Memory IC 18.5mm mm
Price: 0.0000
RFQ -
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MX25L1006EMI-10G Macronix
3/3.3V V MX25xxx05/06 Memory IC MX25xxx05/06 Series 1 Mb kb 4.9mm mm
Price: 0.0000
RFQ -
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MR4A08BYS35 Everspin Technologies Inc.
Surface Mount 44 Pin Memory IC 16 Mb kb 18.41mm mm 180mA mA 8b b
Price: 32.4152
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24LC02BT-I/SN Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 24LC02B 2 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
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FM24CL16B-GTR Cypress Semiconductor Corp
Surface Mount F-RAM™ 8 Pin Memory IC F-RAM™ Series FM24CL16 16 kb kb 4.9mm mm 300μA mA 8b b
Price: 0.0000
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IS46DR16320C-3DBLA2 ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 Mb kb 12.5mm mm 250mA mA
Price: 0.0000
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CY14B116L-ZS25XI Cypress Semiconductor Corp
Surface Mount Memory IC 16 Mb kb 18.415mm mm 95mA mA 8b b
Price: 0.0000
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7164S25DB Integrated Device Technology (IDT)
5V V 28 Pin Memory IC 64 kb kb 37.2mm mm
Price: 0.0000
RFQ -
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IDT71256SA20TP Integrated Device Technology (IDT)
5V V Through Hole 28 Pin Memory IC 256 kb kb 145mA mA 8b b
Price: 0.0000
RFQ -
M29W800DB70N6E Micron Technology Inc.
3/3.3V V 48 Pin Memory IC M29W800 8 Mb kb 18.4mm mm 10mA mA
Price: 0.9669
RFQ -
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