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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Published Series Part Status Moisture Sensitivity Level (MSL) RoHS Status Voltage - Rated Current Rating Number of Pins Package / Case REACH SVHC Frequency Mounting Type Operating Temperature Technology Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Gain Current Rating (Amps) Threshold Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Noise Figure Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275-6/2 1.99GHz 19dB H-37275-6/2 2.6A LDMOS 30V 80W
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0.00000000 16 Weeks Tube C2M™ Active Not Applicable RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-4 277W Tc N-Channel 125mOhm @ 28A, 20V 4V @ 10mA 2250pF @ 1000V 120nC @ 20V 40A Tc 1700V 20V +25V, -10V
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0.00000000 16 Weeks Tube 2014 Z-FET™ Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.8V 62.5W Tc 10A N-Channel 370m Ω @ 6A, 20V 2.8V @ 1.25mA (Typ) 259pF @ 1000V 20.4nC @ 20V 10A Tc 1200V 20V +25V, -10V
C3M0021120D C3M0021120D Cree/Wolfspeed 29.8198
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 469W Tc N-Channel 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 4818pF @ 1000V 160nC @ 15V 100A Tc 1200V 15V +15V, -4V
C3M0016120D C3M0016120D Cree/Wolfspeed 32.2287
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 556W Tc N-Channel 22.3mOhm @ 75A, 15V 3.6V @ 23mA 6085pF @ 1000V 207nC @ 15V 115A Tc 1200V 15V +15V, -4V
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0.00000000 download 13 Weeks Tube Automotive, AEC-Q101, E Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 125W Tc N-Channel 84.5mOhm @ 20A, 15V 3.5V @ 5mA 660pF @ 600V 30.4nC @ 15V 35A Tc 900V 15V +18V, -8V
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0.00000000 download Tape & Reel (TR) Discontinued 3 (168 Hours) RoHS Compliant 65V 10-LDFN Exposed Pad 2.14GHz 16.2dB PG-SON-10 150mA LDMOS 28V 9.3W
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0.00000000 GaN Active 125V H-37248C-4 3.4GHz~3.6GHz 13.5dB H-37248C-4 200mA HEMT 48V 280W
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0.00000000 download Tube 2010 Obsolete 3 (168 Hours) RoHS Compliant 120V 1.8A 440166 1.95GHz 15dB 1.8A 440166 500mA Silicon Carbide MESFET 48V 3.1dB 12W
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0.00000000 GaN Active 1 (Unlimited) 84V 440206 4GHz 14dB 440206 400mA HEMT 28V 45W
PTVA120251EA-V2-R250 PTVA120251EA-V2-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
CG2H40035F CG2H40035F Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 1 (Unlimited) 28V 6GHz HEMT 35W
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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