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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Evaluation Kit Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Gain Max Power Dissipation Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
CPW3-1700-S010B-WP CPW3-1700-S010B-WP Cree/Wolfspeed 0.0000
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0.00000000 39 Weeks Surface Mount Tray 2010 Z-Rec® Active 1 (Unlimited) RoHS Compliant Die Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 1700V 2V @ 10A -55°C~175°C 1.7kV 10A 1700V 0 s 880pF @ 0V 1MHz
CMF20120D CMF20120D Cree/Wolfspeed 2.7676
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0.00000000 download 10 Weeks Through Hole Tube 2005 Z-FET™ Obsolete 1 (Unlimited) 135°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~135°C TJ SiCFET (Silicon Carbide) 1 Single 150W 13 ns 2.5V 80mOhm TO-247-3 215W Tc 42A 40 ns N-Channel 110mOhm @ 20A, 20V 4V @ 1mA 1915pF @ 800V 90.8nC @ 20V 38ns 24 ns 25V 1.2kV 2.5 V 42A Tc 1200V 1.915nF 20V +25V, -5V 110 mΩ
C4D15120H C4D15120H Cree/Wolfspeed 12.8662
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 15A -55°C~175°C 1200V 39A DC 0ns 1.2nF @ 0V 1MHz
CSD06060G CSD06060G Cree/Wolfspeed 0.0000
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 6A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 340pF 8541.10.00.80 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 175°C Rectifier Diodes Not Qualified 1 SINGLE Silicon Carbide Schottky EFFICIENCY 1 TO-252 6A Standard CATHODE No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 6A -55°C~175°C 600V 10A 0 s 340pF @ 0V 1MHz
C3D10060G C3D10060G Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 11.05mm RoHS Compliant No 2 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.572mm 10.312mm Surface Mount 136.3W Silicon Carbide Schottky 14A 1.8V 250A Single 50μA TO-263-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 10A 50μA 600V 250A 90A 600V 29A DC 0 s 480pF @ 0V 1MHz
C3D08065I C3D08065I Cree/Wolfspeed 0.0000
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0.00000000 download 6 Weeks Through Hole Tube 2013 Z-Rec® Active 1 (Unlimited) Through Hole 175°C -55°C RoHS Compliant 2 TO-220-2 Isolated Tab Unknown Through Hole 6.000006g 48W Silicon Carbide Schottky 8A 1.8V Single No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 60μA 650V 69A 16.5A DC 0ns 441pF @ 0V 1MHz
C4D05120E C4D05120E Cree/Wolfspeed 6.4563
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0.00000000 6 Weeks Surface Mount Tube 2012 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 2 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 81W Silicon Carbide Schottky 8.2A 1.8V 42A Single 150μA No Recovery Time > 500mA (Io) 150μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 8.2A 300μA 1.2kV 42A 46A 1200V 19A DC 0ns 390pF @ 0V 1MHz
CPW2-1200-S010B-FR1 CPW2-1200-S010B-FR1 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited)
C3D20060D C3D20060D Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Radial, Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 16.03mm RoHS Compliant No 3 TO-247-3 Unknown 21.082mm 5.156mm Through Hole 136.3W Silicon Carbide Schottky 28A 1.8V 250A Common Cathode 50μA TO-247-3 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 10A 50μA 600V 157A 1 Pair Common Cathode 180A 600V 10A 0 s
CPW2-1200-S010B CPW2-1200-S010B Cree/Wolfspeed 0.0000
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0.00000000 Tube Z-Rec® Obsolete 1 (Unlimited) Die Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 200μA @ 5A 1.8V @ 10A -55°C~175°C 31A DC 0ns 1000F @ 0V 1MHz
C3M0016120D C3M0016120D Cree/Wolfspeed 32.2287
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 556W Tc N-Channel 22.3mOhm @ 75A, 15V 3.6V @ 23mA 6085pF @ 1000V 207nC @ 15V 115A Tc 1200V 15V +15V, -4V
PTVA120121M-V1-R1K PTVA120121M-V1-R1K Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant 105V 10-LDFN Exposed Pad 500MHz~1.4GHz 21.64dB 1μA PG-SON-10 50mA LDMOS 48V 15.62W
C3D08065A C3D08065A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2015 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 650V 220A 80A 650V 24A DC 0 s 441pF @ 0V 1MHz
CGH35030F CGH35030F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks GaN Active 1 (Unlimited) RoHS Compliant 84V 440166 3.3GHz~3.9GHz 11.5dB 440166 120mA HEMT 28V 30W
CGHV59350F CGHV59350F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 125V 24A 440217 5.2GHz~5.9GHz 11.2dB 24A 440217 1A HEMT 50V 450W
C3D06060G C3D06060G Cree/Wolfspeed 5.5573
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 11.05mm RoHS Compliant No 2 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.572mm 10.312mm Surface Mount 79W Silicon Carbide Schottky 6A 1.8V 200A Single 50μA TO-263-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 6A -55°C~175°C 600V 6A 50μA 600V 70A 70A 600V 19A DC 0 s 295pF @ 0V 1MHz
CG2H40045P CG2H40045P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 120V 440206 4GHz 16dB 440206 400mA HEMT 28V 45W
PTFB090901FA-V2-R250 PTFB090901FA-V2-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3M0065090D C3M0065090D Cree/Wolfspeed 13.2133
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0.00000000 16 Weeks Tube 2005 C3M™ Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 125W Tc 36A N-Channel 78m Ω @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30.4nC @ 15V 36A Tc 900V 15V +18V, -8V
C2M1000170D C2M1000170D Cree/Wolfspeed 3.5452
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 69W 9 ns 2.4V 950mOhm TO-247-3 69W Tc 4.9A 15 ns N-Channel 1.1Ohm @ 2A, 20V 2.4V @ 100μA 191pF @ 1000V 13nC @ 20V 46ns 9 ns 25V 2.4 V 4.9A Tc 1700V 191pF 20V +25V, -10V 1.1 Ω
PXAC260602FC-V1-R0 PXAC260602FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.69GHz 15.7dB H-37248-4 85mA LDMOS 28V 5W
C3D12065A C3D12065A Cree/Wolfspeed 4.9683
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0.00000000 11 Weeks Tube 2016 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky 35A TO-220-2 No Recovery Time > 500mA (Io) 74μA @ 650V 1.8V @ 12A -55°C~175°C 650V 35A DC 0ns 641.5pF @ 0V 1MHz
C3D04065E C3D04065E Cree/Wolfspeed 0.0000
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 13.5A DC 0ns 251pF @ 0V 1MHz
C3M0065090J-TR C3M0065090J-TR Cree/Wolfspeed 0.0000
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C3M™ Active 3 (168 Hours) RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 65mOhm D2PAK-7 113W Tc N-Channel 78mOhm @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30nC @ 15V 35A Tc 900V 15V +19V, -8V
CPW2-1200-S005B CPW2-1200-S005B Cree/Wolfspeed 0.0000
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0.00000000 Tube Z-Rec® Obsolete 1 (Unlimited) Die Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 200μA @ 1.5V 1.8V @ 5A -55°C~175°C 17.5A DC 0ns 455pF @ 0V 1MHz
PXFC191507FC-V1-R0 PXFC191507FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
GTVA220701FA-V1-R2 GTVA220701FA-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant NOT SPECIFIED NOT SPECIFIED
C2M0160120D C2M0160120D Cree/Wolfspeed 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 25.5mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 125W 9 ns 2.5V 160mOhm TO-247-3 125W Tc 19A 150°C 16 ns N-Channel 196mOhm @ 10A, 20V 2.5V @ 500μA 527pF @ 800V 32.6nC @ 20V 12ns 7 ns 20V 1.2kV 19A Tc 1200V 527pF 20V +25V, -10V 196 mΩ
CGH60120D-GP4 CGH60120D-GP4 Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 84V Die 6GHz 13dB Die 1A HEMT 28V 120W
PXAC201202FC-V2-R0 PXAC201202FC-V2-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant 65V H-37248-4 2.2GHz 17dB H-37248-4 240mA LDMOS 28V 16W
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