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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Voltage - Rated Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Technology Operating Mode Evaluation Kit Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Gain Max Power Dissipation Reference Standard Number of Elements Configuration Diode Type Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
C3M0075120D C3M0075120D Cree/Wolfspeed 13.8253
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0.00000000 8 Weeks Tube C3M™ Active 1 (Unlimited) TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 113.6W Tc N-Channel 90mOhm @ 20A, 15V 4V @ 5mA 1350pF @ 1000V 54nC @ 15V 30A Tc 1200V 15V +19V, -8V
C2M0280120D C2M0280120D Cree/Wolfspeed 7.8435
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0.00000000 16 Weeks Tube 2014 Z-FET™ Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.8V 62.5W Tc 10A N-Channel 370m Ω @ 6A, 20V 2.8V @ 1.25mA (Typ) 259pF @ 1000V 20.4nC @ 20V 10A Tc 1200V 20V +25V, -10V
C3M0120100K C3M0120100K Cree/Wolfspeed 0.0000
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0.00000000 download 16 Weeks Tube 2016 C3M™ Active 1 (Unlimited) 4 RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 IEC-60747-8-4 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.155Ohm 1000V N-Channel 155m Ω @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A 22A Tc 1000V 50A 15V ±15V
C3D08065A C3D08065A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2015 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 650V 220A 80A 650V 24A DC 0 s 441pF @ 0V 1MHz
CMF20120D CMF20120D Cree/Wolfspeed 2.7676
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0.00000000 download 10 Weeks Through Hole Tube 2005 Z-FET™ Obsolete 1 (Unlimited) 135°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~135°C TJ SiCFET (Silicon Carbide) 1 Single 150W 13 ns 2.5V 80mOhm TO-247-3 215W Tc 42A 40 ns N-Channel 110mOhm @ 20A, 20V 4V @ 1mA 1915pF @ 800V 90.8nC @ 20V 38ns 24 ns 25V 1.2kV 2.5 V 42A Tc 1200V 1.915nF 20V +25V, -5V 110 mΩ
C3D20060D C3D20060D Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Radial, Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 16.03mm RoHS Compliant No 3 TO-247-3 Unknown 21.082mm 5.156mm Through Hole 136.3W Silicon Carbide Schottky 28A 1.8V 250A Common Cathode 50μA TO-247-3 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 10A 50μA 600V 157A 1 Pair Common Cathode 180A 600V 10A 0 s
C3M0065090D C3M0065090D Cree/Wolfspeed 13.2133
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0.00000000 16 Weeks Tube 2005 C3M™ Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 125W Tc 36A N-Channel 78m Ω @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30.4nC @ 15V 36A Tc 900V 15V +18V, -8V
CG2H80045D-GP4 CG2H80045D-GP4 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 120V Die 8GHz 15dB 500mA HEMT 28V 45W
C3M0016120D C3M0016120D Cree/Wolfspeed 32.2287
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 556W Tc N-Channel 22.3mOhm @ 75A, 15V 3.6V @ 23mA 6085pF @ 1000V 207nC @ 15V 115A Tc 1200V 15V +15V, -4V
PTFB090901FA-V2-R250 PTFB090901FA-V2-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
PTFA220121M-V4 PTFA220121M-V4 Cree/Wolfspeed 0.0000
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0.00000000 download Tape & Reel (TR) Discontinued 3 (168 Hours) RoHS Compliant 65V 10-LDFN Exposed Pad 2.14GHz 16.2dB PG-SON-10 150mA LDMOS 28V 9.3W
GTVA261701FA-V1-R0 GTVA261701FA-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
PXAC241002FC-V1-R2 PXAC241002FC-V1-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant
PTVA120251EA-V2-R250 PTVA120251EA-V2-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C2M1000170D C2M1000170D Cree/Wolfspeed 3.5452
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 69W 9 ns 2.4V 950mOhm TO-247-3 69W Tc 4.9A 15 ns N-Channel 1.1Ohm @ 2A, 20V 2.4V @ 100μA 191pF @ 1000V 13nC @ 20V 46ns 9 ns 25V 2.4 V 4.9A Tc 1700V 191pF 20V +25V, -10V 1.1 Ω
C2M0160120D C2M0160120D Cree/Wolfspeed 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 Z-FET™ Active 1 (Unlimited) 150°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 25.5mm 5.21mm Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) Yes 1 1 Single 125W 9 ns 2.5V 160mOhm TO-247-3 125W Tc 19A 150°C 16 ns N-Channel 196mOhm @ 10A, 20V 2.5V @ 500μA 527pF @ 800V 32.6nC @ 20V 12ns 7 ns 20V 1.2kV 19A Tc 1200V 527pF 20V +25V, -10V 196 mΩ
PTFA092201E-V4-R0 PTFA092201E-V4-R0 Cree/Wolfspeed 0.0000
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0.00000000 download Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V 2-Flatpack, Fin Leads, Flanged 920MHz~960MHz 18.5dB 10μA 1.85A LDMOS 30V 220W
CG2H80120D-GP4 CG2H80120D-GP4 Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Active 1 (Unlimited) RoHS Compliant
PTFC260362SC-V1-R250 PTFC260362SC-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 Active
PTFC262157FH-V1-R250 PTFC262157FH-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
C3D12065A C3D12065A Cree/Wolfspeed 4.9683
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0.00000000 11 Weeks Tube 2016 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky 35A TO-220-2 No Recovery Time > 500mA (Io) 74μA @ 650V 1.8V @ 12A -55°C~175°C 650V 35A DC 0ns 641.5pF @ 0V 1MHz
C3D16065D1 C3D16065D1 Cree/Wolfspeed 4.5926
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0.00000000 Z-Rec® Active ROHS3 Compliant TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 95μA @ 650V 1.8V @ 16A -55°C~175°C 650V 0ns
CG2H40045P CG2H40045P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 120V 440206 4GHz 16dB 440206 400mA HEMT 28V 45W
CGH60030D-GP4 CGH60030D-GP4 Cree/Wolfspeed 0.0000
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0.00000000 26 Weeks Tray 2012 GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V Die 6GHz 15dB Die 250mA HEMT 28V 30W
CPW2-1200-S010BP CPW2-1200-S010BP Cree/Wolfspeed 0.0000
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0.00000000 Obsolete 1 (Unlimited)
PTFB211503EL-V1-R0 PTFB211503EL-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 65V H-33288-6 2.17GHz 18dB 1.2A LDMOS 30V 32W
PXAC182002FC-V2-R2 PXAC182002FC-V2-R2 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37248-4 1.805GHz~1.88GHz 16.5dB 1μA H-37248-4 400mA LDMOS 28V
CPW2-1200-S010B-FR1 CPW2-1200-S010B-FR1 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited)
C3D04060F C3D04060F Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2011 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.3mm RoHS Compliant No 2 TO-220-2 Full Pack, Isolated Tab Unknown 16.07mm 4.9mm Through Hole 13.1W Silicon Carbide Schottky 4A 1.7V 110A Single 50μA TO-220-F2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 4A -55°C~175°C 600V 4A 100μA 600V 30A 30A 600V 6A DC 0 s 251pF @ 0V 1MHz
C4D15120H C4D15120H Cree/Wolfspeed 12.8662
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 15A -55°C~175°C 1200V 39A DC 0ns 1.2nF @ 0V 1MHz
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