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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Reverse Voltage (DC) Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Emitter Base Voltage (VEBO) hFE Min Diode Capacitance-Nom Capacitance Ratio Capacitance Ratio Condition DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
TK12E60W,S1VX TK12E60W,S1VX Toshiba Semiconductor and Storage 0.4634
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant No TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 110W 110W Tc 11.5A 85 ns N-Channel 300m Ω @ 5.8A, 10V 3.7V @ 600μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 600V Super Junction 11.5A Ta 10V ±30V
TPH2R104PL,LQ TPH2R104PL,LQ Toshiba Semiconductor and Storage 1.4233
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 830mW Ta 116W Tc N-Channel 2.1m Ω @ 50A, 10V 2.4V @ 500μA 6230pF @ 20V 78nC @ 10V 100A Tc 40V 4.5V 10V ±20V
SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors Single 500mW 500mW Ta 3.4A P-Channel 59m Ω @ 3A, 4.5V 1V @ 1mA 630pF @ 10V 10.4nC @ 4.5V 8V -20V 3.4A Ta 20V 1.5V 4.5V ±8V
2SC2229-O(MIT1F,M) 2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage 0.1213
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
CVJ10F30,LF CVJ10F30,LF Toshiba Semiconductor and Storage 0.3283
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-SMD (5 Leads), Flat Lead Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 30V 570mV @ 1A 125°C Max 2 Independent 30V 1A
2SC2235-Y(T6ND,AF 2SC2235-Y(T6ND,AF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage 0.5788
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 98W 98W Tc 60A 43 ns N-Channel 13.8m Ω @ 16A, 10V 4V @ 500μA 2000pF @ 60V 34nC @ 10V 14ns 14 ns 20V 120V 60A Tc 10V ±20V
2SC2235-Y(T6KMATFM 2SC2235-Y(T6KMATFM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
TPN11006NL,LQ TPN11006NL,LQ Toshiba Semiconductor and Storage 0.9061
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 11 ns 700mW Ta 30W Tc 17A 27 ns N-Channel 11.4m Ω @ 8.5A, 10V 2.5V @ 200μA 2000pF @ 30V 23nC @ 10V 4ns 7.1 ns 20V 60V 17A Tc 4.5V 10V ±20V
2SK1119(F) 2SK1119(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Tube 1998 Obsolete 1 (Unlimited) Through Hole 10.3mm RoHS Compliant Lead Free No 3 TO-220-3 2.54mm 9mm 4.7mm Through Hole 150°C TJ MOSFET (Metal Oxide) 1 100W 3.5V 100W Tc 4A N-Channel 3.8 Ω @ 2A, 10V 3.5V @ 1mA 700pF @ 25V 60nC @ 10V 20V 1kV 3.5 V 4A Ta 1000V 10V ±20V
CUS05F30,H3F CUS05F30,H3F Toshiba Semiconductor and Storage 0.0840
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0.00000000 18 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) RoHS Compliant SC-76, SOD-323 unknown Surface Mount CUS05F30 Schottky Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 30V 450mV @ 500mA 30V 500mA 30V 120pF @ 0V 1MHz
1SS389,L3F 1SS389,L3F Toshiba Semiconductor and Storage 0.1804
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 100°C -40°C RoHS Compliant Silver, Tin SC-79, SOD-523 unknown Surface Mount Schottky 100mA Single Fast Recovery =< 500ns, > 200mA (Io) 20μA @ 10V 500mV @ 100mA 125°C Max 10V 100mA 15V 1A 40pF @ 0V 1MHz
2SC5233BTE85LF 2SC5233BTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2009 Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 125°C TJ YES Other Transistors 100mW Single NPN 0.1W NPN 80MHz 100nA ICBO 12V 500mA 500 @ 10mA 2V 250mV @ 10mA, 200mA 130MHz
TK40P04M1(T6RSS-Q) TK40P04M1(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 2 10mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3mm 6.1mm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 1 1 DRAIN Single 47W 27 ns 47W Tc 40A SWITCHING 63 ns SILICON N-Channel 11m Ω @ 20A, 10V 2.3V @ 200μA 1920pF @ 10V 29nC @ 10V 20ns 18 ns 20V 40V 40A Ta 4.5V 10V ±20V
TK560A65Y,S4X TK560A65Y,S4X Toshiba Semiconductor and Storage 1.8865
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0.00000000 16 Weeks Tube DTMOSV Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W N-Channel 560mOhm @ 3.5A, 10V 4V @ 240μA 380pF @ 300V 14.5nC @ 10V 7A Tc 650V 10V ±30V
SSM3J14TTE85LF SSM3J14TTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2014 U-MOSII Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES Other Transistors Single 700mW Ta P-Channel 85m Ω @ 1.35A, 10V 413pF @ 15V 2.7A 2.7A Ta 30V 4V 10V ±20V
2SA1162S-Y,LF 2SA1162S-Y,LF Toshiba Semiconductor and Storage 0.2503
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 RoHS Compliant LOW NOISE TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 125°C TJ DUAL GULL WING 2SA1162 R-PDSO-G3 150mW 150mW 1 SINGLE 80MHz PNP 50V 150mA 50V 300mV AMPLIFIER SILICON PNP 80MHz 100nA ICBO -5V 70 70 @ 2mA 6V 300mV @ 10mA, 100mA
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2010 U-MOSVI Active 1 (Unlimited) 3 RoHS Compliant 3 SOT-23-3 Flat Leads unknown 880μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE 1W 15 ns -500mV 1W Ta -6A 150°C SWITCHING 0.042Ohm 75 ns SILICON P-Channel 42m Ω @ 5A, 10V 1.2V @ 1mA 560pF @ 15V 8.2nC @ 4.5V 12V -22V 6A 6A Ta 30V 1.8V 10V ±12V
SSM3J145TU,LF SSM3J145TU,LF Toshiba Semiconductor and Storage 0.1340
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 103m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 3A Ta 20V 1.5V 4.5V +6V, -8V
TK12A60U(Q,M) TK12A60U(Q,M) Toshiba Semiconductor and Storage 0.6509
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 400mOhm TO-220SIS 35W Tc 12A N-Channel 400mOhm @ 6A, 10V 5V @ 1mA 720pF @ 10V 14nC @ 10V 30ns 8 ns 30V 600V 12A Ta 600V 720pF 10V ±30V 400 mΩ
TK40E10K3,S1X(S TK40E10K3,S1X(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 U-MOSIV Active 1 (Unlimited) RoHS Compliant No TO-220-3 Through Hole MOSFET (Metal Oxide) 147W 1 147W 40A N-Channel 15m Ω @ 20A, 10V 4V @ 1mA 4000pF @ 10V 84nC @ 10V 40A Ta 100V
SSM3J372R,LF SSM3J372R,LF Toshiba Semiconductor and Storage 0.3777
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 1W Ta P-Channel 42m Ω @ 5A, 10V 1.2V @ 1mA 560pF @ 15V 8.2nC @ 4.5V 6A Ta 30V 1.8V 10V +12V, -6V
SSM3J378R,LF SSM3J378R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 1W Ta P-Channel 29.8m Ω @ 3A, 4.5V 1V @ 1mA 840pF @ 10V 12.8nC @ 4.5V 6A Ta 20V 1.5V 4.5V +6V, -8V
TK5Q65W,S1Q TK5Q65W,S1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-251-3 Stub Leads, IPak Through Hole 150°C TJ MOSFET (Metal Oxide) 60W Tc 5.2A N-Channel 1.22 Ω @ 2.6A, 10V 3.5V @ 170μA 380pF @ 300V 10.5nC @ 10V 5.2A Ta 650V 10V ±30V
TK20E60W,S1VX TK20E60W,S1VX Toshiba Semiconductor and Storage 0.0014
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 50 ns 165W Tc 20A 100 ns N-Channel 155m Ω @ 10A, 10V 3.7V @ 1mA 1680pF @ 300V 48nC @ 10V 25ns 6 ns 30V 20A Ta 600V 10V ±30V
CRG07(TE85L,Q,M) CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage 0.3312
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0.00000000 12 Weeks Tape & Reel (TR) 2008 Active 175°C RoHS Compliant 2 SOD-123F No SVHC Surface Mount Standard 700mA 1.1V Single Standard Recovery >500ns, > 200mA (Io) 10μA @ 400V 1.1V @ 700mA 175°C Max 100V 15A 400V
1SV304TPH3F 1SV304TPH3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2003 Active 1 (Unlimited) SMD/SMT RoHS Compliant Lead Free Copper, Silver, Tin No 2 SC-76, SOD-323 Surface Mount 125°C TJ 10V 17.3pF 1SV304 Varactors Single 10V 6.6pF @ 4V 1MHz 18.3pF 3 C1/C4
2SK2962(T6CANO,F,M 2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 10W 10W 80V 3A 80V 500mV NPN 1μA ICBO 180 @ 500mA 2V 500mV @ 100mA, 1A 150MHz
TK15A60U(STA4,Q,M) TK15A60U(STA4,Q,M) Toshiba Semiconductor and Storage 1.6039
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 40W TO-220SIS 40W Tc 15A N-Channel 300mOhm @ 7.5A, 10V 5V @ 1mA 950pF @ 10V 17nC @ 10V 37ns 8 ns 30V 15A Ta 600V 950pF 10V ±30V 300 mΩ
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