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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Position Base Part Number Surface Mount JESD-30 Code Subcategory Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Polarity Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
HN1B04FU-Y(T5L,F,T HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 unknown Surface Mount 125°C TJ 200mW 200mW 50V 150mA 50V 250mV NPN, PNP 100nA ICBO 120 @ 2mA 6V 250mV @ 10mA, 100mA 150MHz
2SJ438(CANO,Q,M) 2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole TO-220NIS
TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage 1.4732
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 132W Tc N-Channel 1.2m Ω @ 50A, 10V 3V @ 500μA 5855pF @ 20V 62nC @ 10V 150A Tc 40V 6V 10V ±20V
TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage 1.1769
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) RoHS Compliant No 8 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 840mW Ta 8.3A N-Channel 8.5m Ω @ 4.2A, 10V 2.5V @ 1mA 1270pF @ 10V 26nC @ 10V 12ns 9 ns 20V 8.3A Ta 30V 4.5V 10V ±20V
TK4A60DA(STA4,Q,M) TK4A60DA(STA4,Q,M) Toshiba Semiconductor and Storage 0.1137
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0.00000000 12 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W 3.5A N-Channel 2.2 Ω @ 1.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3.5A Ta 600V 10V ±30V
SSM3K361TU,LF SSM3K361TU,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 175°C MOSFET (Metal Oxide) 1.8W Ta N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 4.5V 10V ±20V
SSM3J168F,LF SSM3J168F,LF Toshiba Semiconductor and Storage 0.3085
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0.00000000 download 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 1.2W Ta P-Channel 1.9 Ω @ 100mA, 4.5V 2V @ 1mA 82pF @ 10V 3nC @ 10V 400mA Ta 60V 4V 10V +20V, -16V
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 40W Tc N-Channel 190mOhm @ 7.9A, 10V 3.7V @ 790μA 1350pF @ 300V 40nC @ 10V 15.8A Ta 600V 10V ±30V
2SK3132(Q) 2SK3132(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Tube 1999 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-3PL Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 250W 250W Tc 50A 65 ns N-Channel 95m Ω @ 25A, 10V 3.4V @ 1mA 11000pF @ 10V 280nC @ 10V 160ns 245 ns 30V 500V 50A Ta 10V ±30V
2SJ438,Q(M 2SJ438,Q(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole TO-220NIS
SSM3K361R,LF SSM3K361R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads unknown Surface Mount 175°C MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-F3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 1.2W Ta 3.5A SWITCHING 0.069Ohm 100V SILICON N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 14A 9.1 mJ 4.5V 10V ±20V
TK7A55D(STA4,Q,M) TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage 8.2746
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0.00000000 16 Weeks Through Hole Tube 1998 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 7A N-Channel 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 700pF @ 25V 16nC @ 10V 20ns 11 ns 30V 7A Ta 550V 700pF 10V ±30V 1.25 Ω
RN4984FE,LXHF(CT RN4984FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz, 200MHz 47kOhms 47kOhms
SSM3J351R,LF SSM3J351R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 2W Ta P-Channel 134m Ω @ 1A, 10V 2V @ 1mA 660pF @ 10V 15.1nC @ 10V 3.5A Ta 60V 4V 10V +10V, -20V
TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 86W Tc 80A N-Channel 3.7m Ω @ 40A, 10V 2.4V @ 0.2mA 2500pF @ 20V 27nC @ 10V 80A Tc 40V 4.5V 10V ±20V
RN2706,LF RN2706,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 Surface Mount 200mW 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7k Ω 47k Ω
SSM3K35MFV(TPL3) SSM3K35MFV(TPL3) Toshiba Semiconductor and Storage 0.0657
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0.00000000 download 11 Weeks Surface Mount Tape & Reel (TR) 2007 π-MOSVI Active 1 (Unlimited) 1.2mm RoHS Compliant No 3 SOT-723 500μm 800μm Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 150mW 150mW Ta 180mA N-Channel 3 Ω @ 50mA, 4V 1V @ 1mA 9.5pF @ 3V 10V 20V 180mA Ta 1.2V 4V ±10V
RN2903FE,LXHF(CT RN2903FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA 70 @ 10mA, 5V 300mV @ 250μA, 5mA 200MHz 22kOhms 22kOhms
TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 3nF Single 230W 73mOhm TO-3P(N) 230W Tc 30.8A 165 ns N-Channel 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 3000pF @ 300V 105nC @ 10V 32ns 8.5 ns 30V 600V Super Junction 30.8A Ta 600V 3nF 10V ±30V 88 mΩ
RN49A1(TE85L,F) RN49A1(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount YES BIP General Purpose Small Signal 200mW 2 NPN/PNP 0.2W SILICON 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 250MHz 2.2k Ω, 22k Ω 47k Ω
RN2130MFV,L3F RN2130MFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-723 Surface Mount 150mW PNP - Pre-Biased 100nA ICBO 50V 100mA 100 @ 10mA 5V 300mV @ 500μA, 5mA 100 k Ω 100 k Ω
2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 unknown Surface Mount 125°C TJ Other Transistors 200mW 200mW PNP 80MHz Dual 50V 150mA 50V 300mV 2 PNP (Dual) Matched Pair, Common Emitter 80MHz 100nA ICBO -50V -5V 120 120 @ 2mA 6V 300mV @ 10mA, 100mA
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 SC-70, SOT-323 Surface Mount RN131* 100mW NPN Single 100mW 50V 100mA 50V 50V NPN - Pre-Biased 500nA 100mA 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 47 k Ω 10 k Ω
RN2306,LF RN2306,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) 150°C -55°C 2mm RoHS Compliant 3 SC-70, SOT-323 900μm 1.25mm Surface Mount 28.009329mg 100mW 100mW PNP Single 50V USM 100mA 50V 300mV PNP - Pre-Biased 500nA 50V 100mA -100mA -50V -5V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7 kOhms 47 kOhms
RN2111,LXHF(CT RN2111,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 SC-75, SOT-416 Toshiba Semiconductor and Storage Surface Mount 100 mW SSM PNP - Pre-Biased 100nA (ICBO) 50 V 100 mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 200 MHz 10 kOhms
RN2101,LF(CT RN2101,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V 100mA 50V 300mV PNP - Pre-Biased 500nA 30 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7 k Ω 4.7 k Ω
RN1101,LF(CT RN1101,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V SSM 100mA 50V 300mV NPN - Pre-Biased 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 4.7 kOhms 4.7 kOhms
RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-553 unknown Surface Mount BIP General Purpose Small Signal 100mW 100mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω
RN2315TE85LF RN2315TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 150°C -55°C RoHS Compliant No 3 SC-70, SOT-323 Surface Mount RN231* BIP General Purpose Small Signal 100mW 1 PNP Single 100mW 50V 100mA 50V 50V PNP - Pre-Biased 500nA -100mA 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 2.2 k Ω 10 k Ω
RN2707,LF RN2707,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 Surface Mount 200mW 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 47k Ω
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