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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Case Connection Gain Bandwidth Product Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
TK16A60W,S4X TK16A60W,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 40W Tc N-Channel 190mOhm @ 7.9A, 10V 3.7V @ 790μA 1350pF @ 300V 40nC @ 10V 15.8A Ta 600V 10V ±30V
TK5A65W,S5X TK5A65W,S5X Toshiba Semiconductor and Storage 4.3787
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 30W Tc 5.2A N-Channel 1.2 Ω @ 2.6A, 10V 3.5V @ 170μA 380pF @ 300V 10.5nC @ 10V 5.2A Ta 650V 10V ±30V
TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage 12.9028
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 4.1nF Single 270W 55mOhm TO-3P(N) 270W Tc 38.8A 200 ns N-Channel 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 4100pF @ 300V 135nC @ 10V 50ns 9 ns 30V 600V Super Junction 38.8A Ta 600V 4.1nF 10V ±30V 65 mΩ
TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage 1.3555
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1.6W Ta 78W Tc 60A 50 ns N-Channel 2.3m Ω @ 30A, 10V 4V @ 1mA 6100pF @ 30V 72nC @ 10V 9.9ns 16 ns 20V 60A Tc 60V 6.5V 10V ±20V
SSM3K35MFV(TPL3) SSM3K35MFV(TPL3) Toshiba Semiconductor and Storage 0.0657
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0.00000000 download 11 Weeks Surface Mount Tape & Reel (TR) 2007 π-MOSVI Active 1 (Unlimited) 1.2mm RoHS Compliant No 3 SOT-723 500μm 800μm Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 150mW 150mW Ta 180mA N-Channel 3 Ω @ 50mA, 4V 1V @ 1mA 9.5pF @ 3V 10V 20V 180mA Ta 1.2V 4V ±10V
TK5A65D(STA4,Q,M) TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 40W Tc 5A N-Channel 1.43 Ω @ 2.5A, 10V 4V @ 1mA 800pF @ 25V 16nC @ 10V 20ns 12 ns 30V 5A Ta 650V 10V ±30V
2SC4793,NSEIKIF(J 2SC4793,NSEIKIF(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS NPN 1μA ICBO 230V 1A 100 @ 100mA 5V 1.5V @ 50mA, 500mA 100MHz
TPC8113(TE12L,Q) TPC8113(TE12L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 10mOhm 8-SOP (5.5x6.0) 1W Ta 11A P-Channel 10mOhm @ 5.5A, 10V 2V @ 1mA 4500pF @ 10V 107nC @ 10V 6ns 120 ns 20V -30V 11A Ta 30V 4.5nF 4V 10V ±20V 10 mΩ
TK8Q60W,S1VQ TK8Q60W,S1VQ Toshiba Semiconductor and Storage 2.7406
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-251-3 Stub Leads, IPak 500mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) 570pF Single 420mOhm I-PAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-XSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 90W Tc 60A SWITCHING 0.0094Ohm 40V SILICON P-Channel 6.3m Ω @ 30A, 10V 3V @ 1mA 6510pF @ 10V 125nC @ 10V 96ns 240 ns 10V 60A Ta 40V 120A 146 mJ 6V 10V +10V, -20V
TPN7R006PL,L1Q TPN7R006PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 75W Tc N-Channel 7m Ω @ 27A, 10V 2.5V @ 200μA 1875pF @ 30V 20nC @ 10V 54A Tc 60V 4.5V 10V ±20V
2SC3074-O(Q) 2SC3074-O(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tube 2010 Obsolete 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount 150°C TJ 1W 120MHz Single 5A 50V 400mV NPN 1μA ICBO 5A 60V 5V 70 @ 1A 1V 400mV @ 150mA, 3A
SSM3K72KCT,L3F SSM3K72KCT,L3F Toshiba Semiconductor and Storage 0.3495
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 500mW Ta 400mA N-Channel 1.5 Ω @ 100mA, 10V 2.1V @ 250μA 40pF @ 10V 0.6nC @ 4.5V 400mA Ta 60V 4.5V 10V ±20V
2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 10W 10W 80V 3A 80V 500mV NPN 1μA ICBO 180 @ 500mA 2V 500mV @ 100mA, 1A 150MHz
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant 3 SOT-23-3 Flat Leads unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 13 ns 1W Ta 2A 8 ns N-Channel 185m Ω @ 1A, 8V 1.2V @ 1mA 130pF @ 10V 1.1nC @ 4.2V 12V 2A Ta 40V 1.8V 8V ±12V
SSM3J14TTE85LF SSM3J14TTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2014 U-MOSII Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES Other Transistors Single 700mW Ta P-Channel 85m Ω @ 1.35A, 10V 413pF @ 15V 2.7A 2.7A Ta 30V 4V 10V ±20V
TPC8032-H(TE12LQM) TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP (5.5x6.0) 15A N-Channel 6.5mOhm @ 7.5A, 10V 2.5V @ 1mA 2846pF @ 10V 33nC @ 10V 15A Ta 30V 2.846nF 6.5 mΩ
SSM3J332R,LF SSM3J332R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2010 U-MOSVI Active 1 (Unlimited) 3 RoHS Compliant 3 SOT-23-3 Flat Leads unknown 880μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE 1W 15 ns -500mV 1W Ta -6A 150°C SWITCHING 0.042Ohm 75 ns SILICON P-Channel 42m Ω @ 5A, 10V 1.2V @ 1mA 560pF @ 15V 8.2nC @ 4.5V 12V -22V 6A 6A Ta 30V 1.8V 10V ±12V
TPCA8009-H(TE12L,Q TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 7A 8 8-PowerVDFN unknown Surface Mount 150°C TJ 150V MOSFET (Metal Oxide) 1.6W Ta 45W Tc 7A N-Channel 350m Ω @ 3.5A, 10V 4V @ 1mA 600pF @ 10V 10nC @ 10V 7ns 7A Ta 10V ±20V
TJ15S06M3L(T6L1,NQ TJ15S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 3.8946
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 15A SWITCHING 60V SILICON P-Channel 50m Ω @ 7.5A, 10V 3V @ 1mA 1770pF @ 10V 36nC @ 10V 13ns 62 ns 10V 15A Ta 60V 29 mJ 6V 10V +10V, -20V
2SK2917(F) 2SK2917(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tube 2009 Obsolete 1 (Unlimited) RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 90W Tc N-Channel 270m Ω @ 10A, 10V 4V @ 1mA 3720pF @ 10V 80nC @ 10V 18A Ta 500V 10V ±30V
TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 3nF Single 230W 73mOhm TO-3P(N) 230W Tc 30.8A 165 ns N-Channel 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 3000pF @ 300V 105nC @ 10V 32ns 8.5 ns 30V 600V Super Junction 30.8A Ta 600V 3nF 10V ±30V 88 mΩ
2SK1829TE85LF 2SK1829TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 100mW Ta N-Channel 40 Ω @ 10mA, 2.5V 5.5pF @ 3V 50mA Ta 20V 2.5V 10V
TMBT3904,LM TMBT3904,LM Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ 320mW 320mW 50V 150mA 50V 300mV NPN 100nA ICBO 100 @ 10mA 1V 300mV @ 5mA, 50mA 300MHz
2SK3309(TE24L,Q) 2SK3309(TE24L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) TO-220SM 65W Tc N-Channel 650mOhm @ 5A, 10V 5V @ 1mA 920pF @ 10V 23nC @ 10V 10A Ta 450V 10V ±30V
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 27mOhm 8-SOP (5.5x6.0) 1W Ta 7.5A N-Channel 27mOhm @ 3.8A, 10V 2.3V @ 1mA 650pF @ 10V 11nC @ 10V 3ns 2 ns 20V 40V 7.5A Ta 40V 650pF 4.5V 10V ±20V 27 mΩ
TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage 6.7410
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 5.8A N-Channel 1Ohm @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 390pF 10V ±30V 1 Ω
TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) DPAK+ 25W Tc 10A N-Channel 28mOhm @ 5A, 10V 3V @ 1mA 410pF @ 10V 10nC @ 10V 7ns 4 ns 20V 10A Ta 40V 410pF 6V 10V ±20V 28 mΩ
TPN2R203NC,L1Q TPN2R203NC,L1Q Toshiba Semiconductor and Storage 1.0807
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 14 ns 1.8mOhm 8-TSON Advance (3.3x3.3) 700mW Ta 42W Tc 45A 68 ns N-Channel 2.2mOhm @ 22.5A, 10V 2.3V @ 500μA 2230pF @ 15V 34nC @ 10V 9ns 24 ns 20V 30V 45A Tc 30V 2.23nF 10V ±20V 2.2 mΩ
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