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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Lead Pitch Height Width Impedance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Terminal Position Terminal Form JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Max Power Dissipation Reference Standard Number of Elements Configuration Diode Type Tolerance Case Connection Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Diode Configuration Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Impedance-Max Zener Current
TPCF8B01(TE85L,F,M TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2003 U-MOSIII Obsolete 1 (Unlimited) 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 330mW Ta P-Channel 110m Ω @ 1.4A, 4.5V 1.2V @ 200μA 470pF @ 10V 6nC @ 5V Schottky Diode (Isolated) 2.7A Ta 20V 1.8V 4.5V ±8V
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 2.5W Ta 67W Tc N-Channel 4.1m Ω @ 35A, 10V 2.5V @ 1mA 6.3nF @ 50V 75nC @ 10V 92A Ta 70A Tc 100V 4.5V 10V ±20V
TK4P50D(T6RSS-Q) TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage 0.1041
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 80W 80W Tc 4A N-Channel 2 Ω @ 2A, 10V 4.4V @ 1mA 380pF @ 25V 9nC @ 10V 15ns 7 ns 30V 4A Ta 500V 10V ±30V
2SJ377(TE16R1,NQ) 2SJ377(TE16R1,NQ) Toshiba Semiconductor and Storage 9.3291
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0.00000000 download Surface Mount, Through Hole Cut Tape (CT) 2005 Discontinued 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free -5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ -60V MOSFET (Metal Oxide) 1 20W PW-MOLD 20W Tc 5A P-Channel 190mOhm @ 2.5A, 10V 2V @ 1mA 630pF @ 10V 22nC @ 10V 25ns 5A Ta 60V 630pF 4V 10V ±20V 190 mΩ
TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage 12.9028
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 4.1nF Single 270W 55mOhm TO-3P(N) 270W Tc 38.8A 200 ns N-Channel 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 4100pF @ 300V 135nC @ 10V 50ns 9 ns 30V 600V Super Junction 38.8A Ta 600V 4.1nF 10V ±30V 65 mΩ
2SK3342(TE16L1,NQ) 2SK3342(TE16L1,NQ) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 20W Tc 4.5A N-Channel 1 Ω @ 2.5A, 10V 3.5V @ 1mA 440pF @ 10V 10nC @ 10V 4.5A Ta 250V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW 500mW Ta 1.8A P-Channel 136m Ω @ 1A, 2.5V 1V @ 1mA 568pF @ 10V 10.6nC @ 4V 8V 20V 1.8A Ta 1.5V 2.5V ±8V
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 86W Tc 80A N-Channel 3.7m Ω @ 40A, 10V 2.4V @ 0.2mA 2500pF @ 20V 27nC @ 10V 80A Tc 40V 4.5V 10V ±20V
TPCA8A02-H(TE12LQM TPCA8A02-H(TE12LQM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSV-H Obsolete 1 (Unlimited) RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.6W Ta 45W Tc 34A N-Channel 5.3m Ω @ 17A, 10V 2.3V @ 1mA 3430pF @ 10V 36nC @ 10V 3.6ns 7.7 ns 20V 34A Ta 30V 4.5V 10V ±20V
TK31N60W5,S1VF TK31N60W5,S1VF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) EAR99 RoHS Compliant No 3 TO-247-3 Through Hole 38.000013g 150°C TJ MOSFET (Metal Oxide) 1 Single 120 ns 230W Tc 30.8A 165 ns N-Channel 99m Ω @ 15.4A, 10V 4.5V @ 1.5mA 3000pF @ 300V 105nC @ 10V 80ns 8.5 ns 30V 600V 30.8A Ta 10V ±30V
HN1D01F(TE85L,F) HN1D01F(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-74, SOT-457 Surface Mount 125°C Other Diodes Standard Common Anode Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 2 Pair Common Anode 0.5μA 4ns 0.3W
TK31Z60X,S1F TK31Z60X,S1F Toshiba Semiconductor and Storage 9.9198
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0.00000000 16 Weeks Active 1 (Unlimited)
2SK1119(F) 2SK1119(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Tube 1998 Obsolete 1 (Unlimited) Through Hole 10.3mm RoHS Compliant Lead Free No 3 TO-220-3 2.54mm 9mm 4.7mm Through Hole 150°C TJ MOSFET (Metal Oxide) 1 100W 3.5V 100W Tc 4A N-Channel 3.8 Ω @ 2A, 10V 3.5V @ 1mA 700pF @ 25V 60nC @ 10V 20V 1kV 3.5 V 4A Ta 1000V 10V ±20V
TK12A60D(STA4,Q,M) TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 12A N-Channel 550mOhm @ 6A, 10V 4V @ 1mA 1800pF @ 25V 38nC @ 10V 40ns 15 ns 30V 12A Ta 600V 1.8nF 10V ±30V 550 mΩ
TPN4R303NL,L1Q TPN4R303NL,L1Q Toshiba Semiconductor and Storage 0.7198
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 10.5 ns 6.3mOhm 8-TSON Advance (3.3x3.3) 700mW Ta 34W Tc 40A 19 ns N-Channel 4.3mOhm @ 20A, 10V 2.3V @ 200μA 1400pF @ 15V 14.8nC @ 10V 4.5ns 3.5 ns 20V 30V 40A Tc 30V 1.4nF 4.5V 10V ±20V 4.3 mΩ
TK80S04K3L(T6L1,NQ TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 2.9435
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2012 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 13 ns DPAK+ 100W Tc 80A 20 ns N-Channel 3.1mOhm @ 40A, 10V 3V @ 1mA 4340pF @ 10V 87nC @ 10V 28ns 80 ns 20V 80A Ta 40V 4.34nF 6V 10V ±20V 3.1 mΩ
2SK2035(T5L,F,T) 2SK2035(T5L,F,T) Toshiba Semiconductor and Storage 11.9365
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 SC-75, SOT-416 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 100mW SSM 100mW Ta 100mA N-Channel 12Ohm @ 10mA, 2.5V 8.5pF @ 3V 10V 100mA Ta 20V 8.5pF 2.5V 10V 12 Ω
SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVII Active 1 (Unlimited) RoHS Compliant 6-WDFN Exposed Pad unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1.25W 14A P-Channel 9.1m Ω @ 4A, 8V 1V @ 1mA 3350pF @ 6V 47nC @ 4.5V 14A Ta 12V
CRZ12(TE85L,Q,M) CRZ12(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) RoHS Compliant No 2 SOD-123F 30Ohm Surface Mount -40°C~150°C TJ 700mW ±10% Single 700mW 10μA 10μA @ 8V 1V @ 200mA 12V 30Ohm 10mA
TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage 1.1769
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) RoHS Compliant No 8 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 840mW Ta 8.3A N-Channel 8.5m Ω @ 4.2A, 10V 2.5V @ 1mA 1270pF @ 10V 26nC @ 10V 12ns 9 ns 20V 8.3A Ta 30V 4.5V 10V ±20V
SSM3J56MFV,L3F SSM3J56MFV,L3F Toshiba Semiconductor and Storage 0.3589
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-723 unknown 550μm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 150mW 8 ns -300mV 150mW Ta -800mA 26 ns P-Channel 390m Ω @ 800mA, 4.5V 100pF @ 10V 8V -20V 800mA Ta 20V 1.2V 4.5V ±8V
TK7A90E,S4X TK7A90E,S4X Toshiba Semiconductor and Storage 0.3443
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0.00000000 12 Weeks Through Hole Tube 2014 π-MOSVIII Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 55 ns 1.6Ohm TO-220SIS 45W Tc 7A 85 ns N-Channel 2Ohm @ 3.5A, 10V 4V @ 700μA 1350pF @ 25V 32nC @ 10V 20ns 15 ns 30V 7A Ta 900V 1.35nF 10V ±30V 2 Ω
TPC8031-H(TE12LQM) TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 13.3mOhm 8-SOP (5.5x6.0) 11A N-Channel 13.3mOhm @ 5.5A, 10V 2.5V @ 1mA 2150pF @ 10V 21nC @ 10V 3ns 3.9 ns 20V 30V 11A Ta 30V 2.15nF 13.3 mΩ
TK60P03M1,RQ(S TK60P03M1,RQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DPAK 63W Tc 60A N-Channel 6.4mOhm @ 30A, 10V 2.3V @ 500μA 2700pF @ 10V 40nC @ 10V 4.3ns 11 ns 20V 60A Ta 30V 2.7nF 4.5V 10V ±20V 6.4 mΩ
TJ15S06M3L(T6L1,NQ TJ15S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 3.8946
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 15A SWITCHING 60V SILICON P-Channel 50m Ω @ 7.5A, 10V 3V @ 1mA 1770pF @ 10V 36nC @ 10V 13ns 62 ns 10V 15A Ta 60V 29 mJ 6V 10V +10V, -20V
SSM3K131TU,LF SSM3K131TU,LF Toshiba Semiconductor and Storage 0.5755
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) Non-RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 27.6m Ω @ 4A, 10V 2.5V @ 1mA 450pF @ 15V 10.1nC @ 10V 6A Ta 30V 4.5V 10V ±20V
TPC6011(TE85L,F,M) TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage 0.3342
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 2.2W VS-6 (2.9x2.8) 700mW Ta 6A N-Channel 20mOhm @ 3A, 10V 2.5V @ 1mA 640pF @ 10V 14nC @ 10V 5.8ns 8 ns 20V 6A Ta 30V 640pF 4.5V 10V ±20V 20 mΩ
TPH3R704PC,LQ TPH3R704PC,LQ Toshiba Semiconductor and Storage 1.0628
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0.00000000 16 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 830mW Ta 90W Tc N-Channel 3.7m Ω @ 41A, 10V 2.4V @ 300μA 3615pF @ 20V 47nC @ 10V 82A Tc 40V 4.5V 10V ±20V
SSM3K361R,LF SSM3K361R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads unknown Surface Mount 175°C MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-F3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 1.2W Ta 3.5A SWITCHING 0.069Ohm 100V SILICON N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 14A 9.1 mJ 4.5V 10V ±20V
SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2014 Obsolete 1 (Unlimited) RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Powers Single 23 ns 700mW Ta 4.7A 34 ns N-Channel 31m Ω @ 4A, 4V 1020pF @ 10V 1V 20V 4.7A Ta 1.8V 4V ±12V
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