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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature RoHS Status Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Position Terminal Form Number of Channels Subcategory Max Power Dissipation Number of Elements Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
TK16J60W,S1VE TK16J60W,S1VE Toshiba Semiconductor and Storage 4.1378
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0.00000000 16 Weeks Active 1 (Unlimited)
SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage 1.3659
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 6-WDFN Exposed Pad unknown Surface Mount 150°C MOSFET (Metal Oxide) 2.5W Ta N-Channel 11.6m Ω @ 4A, 10V 2.4V @ 100μA 1110pF @ 20V 7.5nC @ 4.5V 12A Ta 40V 4.5V 10V ±20V
TK5A65W,S5X TK5A65W,S5X Toshiba Semiconductor and Storage 4.3787
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 30W Tc 5.2A N-Channel 1.2 Ω @ 2.6A, 10V 3.5V @ 170μA 380pF @ 300V 10.5nC @ 10V 5.2A Ta 650V 10V ±30V
TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 86W Tc 80A N-Channel 3.7m Ω @ 40A, 10V 2.4V @ 0.2mA 2500pF @ 20V 27nC @ 10V 80A Tc 40V 4.5V 10V ±20V
TPN2R805PL,L1Q TPN2R805PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 2.67W Ta 104W Tc N-Channel 2.8m Ω @ 40A, 10V 2.4V @ 300μA 3.2nF @ 22.5V 39nC @ 10V 139A Ta 80A Tc 45V 4.5V 10V ±20V
TK110E10PL,S1X TK110E10PL,S1X Toshiba Semiconductor and Storage 1.0411
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0.00000000 12 Weeks Active 1 (Unlimited)
TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage 12.9028
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 4.1nF Single 270W 55mOhm TO-3P(N) 270W Tc 38.8A 200 ns N-Channel 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 4100pF @ 300V 135nC @ 10V 50ns 9 ns 30V 600V Super Junction 38.8A Ta 600V 4.1nF 10V ±30V 65 mΩ
SSM3K318T,LF SSM3K318T,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 14 ns 101mOhm TSM 700mW Ta 2.5A 9.5 ns N-Channel 107mOhm @ 2A, 10V 235pF @ 30V 7nC @ 10V 2.8V 60V 2.5A Ta 60V 235pF 107 mΩ
SSM3K127TU,LF SSM3K127TU,LF Toshiba Semiconductor and Storage 0.3170
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 123m Ω @ 1A, 4V 1V @ 1mA 123pF @ 15V 1.5nC @ 4V 2A Ta 30V 1.8V 4V ±12V
2SK1829TE85LF 2SK1829TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 100mW Ta N-Channel 40 Ω @ 10mA, 2.5V 5.5pF @ 3V 50mA Ta 20V 2.5V 10V
TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage 1.1769
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) RoHS Compliant No 8 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 840mW Ta 8.3A N-Channel 8.5m Ω @ 4.2A, 10V 2.5V @ 1mA 1270pF @ 10V 26nC @ 10V 12ns 9 ns 20V 8.3A Ta 30V 4.5V 10V ±20V
TK35N65W5,S1F TK35N65W5,S1F Toshiba Semiconductor and Storage 4.9337
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant No 3 TO-247-3 Through Hole 38.000013g 150°C TJ MOSFET (Metal Oxide) 1 Single 110 ns 270W Tc 35A 150 ns N-Channel 95m Ω @ 17.5A, 10V 4.5V @ 2.1mA 4100pF @ 300V 115nC @ 10V 55ns 8 ns 30V 650V 35A Ta 10V ±30V
TK4A60DA(STA4,Q,M) TK4A60DA(STA4,Q,M) Toshiba Semiconductor and Storage 0.1137
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0.00000000 12 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W 3.5A N-Channel 2.2 Ω @ 1.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3.5A Ta 600V 10V ±30V
TK20N60W,S1VF TK20N60W,S1VF Toshiba Semiconductor and Storage 0.0017
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-247-3 Through Hole 38.000013g 150°C TJ MOSFET (Metal Oxide) 1 Single 50 ns 130mOhm TO-247 165W Tc 20A 100 ns N-Channel 155mOhm @ 10A, 10V 3.7V @ 1mA 1680pF @ 300V 48nC @ 10V 25ns 6 ns 30V 20A Ta 600V 1.68nF 10V ±30V 155 mΩ
2SK2845(TE16L1,Q) 2SK2845(TE16L1,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 40W 40W Tc 1A N-Channel 9 Ω @ 500mA, 10V 4V @ 1mA 350pF @ 25V 15nC @ 10V 20ns 30 ns 30V 900V 1A Ta 10V ±30V
2SK3670(T6CANO,F,M 2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
SSM6J206FE(TE85L,F SSM6J206FE(TE85L,F Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Active 1 (Unlimited) RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors Single 500mW 500mW Ta 2A P-Channel 130m Ω @ 1A, 4V 1V @ 1mA 335pF @ 10V 8V -20V 2A 2A Ta 20V 1.8V 4V ±8V
TPC6010-H(TE85L,FM TPC6010-H(TE85L,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) RoHS Compliant No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 2.2W 700mW Ta 6.1A N-Channel 59m Ω @ 3.1A, 10V 2.3V @ 100μA 830pF @ 10V 12nC @ 10V 2.4ns 3.2 ns 20V 6.1A Ta 60V 4.5V 10V ±20V
SSM6J505NU,LF SSM6J505NU,LF Toshiba Semiconductor and Storage 0.4413
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVI Active 1 (Unlimited) 6 RoHS Compliant 6 6-WDFN Exposed Pad unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD 1 DRAIN Single 1.25W 1.25W Ta 12A SWITCHING SILICON P-Channel 12m Ω @ 4A, 4.5V 1V @ 1mA 2700pF @ 10V 37.6nC @ 4.5V 6V -12V 12A Ta 12V 30A 1.2V 4.5V ±6V
TK11A65W,S5X TK11A65W,S5X Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 45 ns 330mOhm TO-220SIS 35W Tc 11.1A 85 ns N-Channel 390mOhm @ 5.5A, 10V 3.5V @ 450μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 650V 11.1A Ta 650V 890pF 10V ±30V 390 mΩ
TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 8-TSON Advance (3.3x3.3) 630mW Ta 104W Tc 80A N-Channel 2.3mOhm @ 40A, 10V 2.4V @ 0.3mA 3600pF @ 20V 41nC @ 10V 80A Tc 40V 3.6nF 4.5V 10V ±20V 2.3 mΩ
2SJ438,Q(M 2SJ438,Q(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole TO-220NIS
T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 1998 U-MOSVII-H Active 1 (Unlimited) 150°C RoHS Compliant TO-236-3, SC-59, SOT-23-3 1.1mm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 320mW 2 ns 1.1V 2.8Ohm SOT-23 320mW Ta 200mA 150°C 7 ns N-Channel 3.9Ohm @ 100mA, 10V 2.1V @ 250μA 17pF @ 10V 0.35nC @ 4.5V 20V 60V 200mA Ta 60V 17pF 4.5V 10V ±20V 3.9 Ω
SSM3J358R,LF SSM3J358R,LF Toshiba Semiconductor and Storage 0.4093
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0.00000000 12 Weeks Tape & Reel (TR) 2017 U-MOSVII Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) SOT-23F 1W Ta P-Channel 22.1mOhm @ 6A, 8V 1V @ 1mA 1331pF @ 10V 38.5nC @ 8V 6A Ta 20V 1.8V 8V ±10V
TK22E10N1,S1X TK22E10N1,S1X Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2010 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 72W Tc 52A N-Channel 13.8m Ω @ 11A, 10V 4V @ 300μA 1800pF @ 50V 28nC @ 10V 52A Tc 100V 10V ±20V
TPC6011(TE85L,F,M) TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage 0.3342
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 2.2W VS-6 (2.9x2.8) 700mW Ta 6A N-Channel 20mOhm @ 3A, 10V 2.5V @ 1mA 640pF @ 10V 14nC @ 10V 5.8ns 8 ns 20V 6A Ta 30V 640pF 4.5V 10V ±20V 20 mΩ
TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 27mOhm 8-SOP (5.5x6.0) 1W Ta 7.5A N-Channel 27mOhm @ 3.8A, 10V 2.3V @ 1mA 650pF @ 10V 11nC @ 10V 3ns 2 ns 20V 40V 7.5A Ta 40V 650pF 4.5V 10V ±20V 27 mΩ
SSM3J135TU,LF SSM3J135TU,LF Toshiba Semiconductor and Storage 0.2996
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) Non-RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 103m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 3A Ta 20V 1.5V 4.5V ±8V
TPN4R303NL,L1Q TPN4R303NL,L1Q Toshiba Semiconductor and Storage 0.7198
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 10.5 ns 6.3mOhm 8-TSON Advance (3.3x3.3) 700mW Ta 34W Tc 40A 19 ns N-Channel 4.3mOhm @ 20A, 10V 2.3V @ 200μA 1400pF @ 15V 14.8nC @ 10V 4.5ns 3.5 ns 20V 30V 40A Tc 30V 1.4nF 4.5V 10V ±20V 4.3 mΩ
SSM6J53FE(TE85L,F) SSM6J53FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW 500mW Ta 1.8A P-Channel 136m Ω @ 1A, 2.5V 1V @ 1mA 568pF @ 10V 10.6nC @ 4V 8V 20V 1.8A Ta 1.5V 2.5V ±8V
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