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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Power Dissipation Ambient-Max Turn On Time-Max (ton) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff)
FDPF44N25TRDTU FDPF44N25TRDTU ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 4 days ago) Through Hole Tube UniFET™ yes Active 1 (Unlimited) EAR99 10.36mm ROHS3 Compliant TO-220-3 Full Pack, Formed Leads not_compliant 16.07mm 4.9mm Through Hole 2.565g -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 53 ns 38W Tc 44A 85 ns N-Channel 69m Ω @ 22A, 10V 5V @ 250μA 2870pF @ 25V 61nC @ 10V 402ns 112 ns 30V 44A Tc 250V 10V ±30V
TSM80N1R2CP ROG TSM80N1R2CP ROG Taiwan Semiconductor Corporation 0.0000
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0.00000000 download 30 Weeks Digi-Reel® Active 3 (168 Hours) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 110W Tc N-Channel 1.2 Ω @ 2.75A, 10V 4V @ 250μA 685pF @ 100V 19.4nC @ 10V 5.5A Tc 800V 10V ±30V
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2017 TrenchFET® yes Active 1 (Unlimited) 6 EAR99 3.05mm ROHS3 Compliant Lead Free Tin No 6 SOT-23-6 Thin, TSOT-23-6 Unknown 1mm 1.65mm Surface Mount 19.986414mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 260 30 6 1 Other Transistors 1 Single 2W 10 ns -3V 2W Ta 4.2W Tc -6.1A SWITCHING 0.034Ohm 30 ns SILICON P-Channel 34m Ω @ 6.1A, 10V 3V @ 250μA 1000pF @ 15V 33nC @ 10V 15ns 10 ns 20V -30V -3 V 8A 8A Tc 30V 4.5V 10V ±20V
IRFS634B_FP001 IRFS634B_FP001 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Full Pack unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE ISOLATED 38W Tc SWITCHING 0.45Ohm 250V SILICON N-Channel 450m Ω @ 4.05A, 10V 4V @ 250μA 1pF @ 25V 38nC @ 10V 8.1A 8.1A Tc 250V 32.4A 200 mJ 10V ±30V
APT10M11JVRU2 APT10M11JVRU2 Microsemi 0.0000
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0.00000000 download 36 Weeks Chassis Mount, Screw Bulk 2006 yes Active 1 (Unlimited) 4 EAR99 38.2mm RoHS Compliant Lead Free No 4 AVALANCHE RATED SOT-227-4, miniBLOC 9.6mm 25.4mm Chassis Mount 30.000004g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 1 FET General Purpose Power 1 ISOLATED Single 450W 16 ns 450W Tc 142A SWITCHING 51 ns SILICON N-Channel 11m Ω @ 71A, 10V 4V @ 2.5mA 8600pF @ 25V 300nC @ 10V 48ns 9 ns 30V 142A Tc 100V 576A 2500 mJ 10V ±30V
DMP3099LQ-7 DMP3099LQ-7 Diodes Incorporated 0.0000
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0.00000000 23 Weeks Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) 3 ROHS3 Compliant HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING YES R-PDSO-G3 1 SINGLE 1.08W SWITCHING 99Ohm 30V SILICON P-Channel 65m Ω @ 3.8A, 10V 2.1V @ 250μA 563pF @ 25V 11nC @ 10V 3.8A 3.8A Ta 30V 11A 10.2 mJ 9.8ns 4.5V 10V ±20V 46ns
STL4N80K5 STL4N80K5 STMicroelectronics 0.0000
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 8 months ago) Surface Mount Tape & Reel (TR) SuperMESH5™ Active 1 (Unlimited) EAR99 6.35mm ROHS3 Compliant Lead Free 8 8-PowerVDFN 950μm 5.4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED STL4 1 Single 38W 16.5 ns 38W Tc 2.5A 36 ns N-Channel 2.5 Ω @ 1.5A, 10V 5V @ 100μA 175pF @ 100V 10.5nC @ 10V 15ns 21 ns 30V 800V 2.5A Tc 10V ±30V
IRF6644 IRF6644 Infineon Technologies 0.0000
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0.00000000 download Tube 2005 HEXFET® Obsolete 3 (168 Hours) 3 EAR99 Non-RoHS Compliant DirectFET™ Isometric MN Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-XBCC-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 89W Tc SWITCHING 0.013Ohm 100V SILICON N-Channel 13m Ω @ 10.3A, 10V 4.8V @ 150μA 2210pF @ 25V 47nC @ 10V 10.3A 10.3A Ta 60A Tc 100V 82A 220 mJ 10V ±20V
TJ15S06M3L(T6L1,NQ TJ15S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 3.8946
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 15A SWITCHING 60V SILICON P-Channel 50m Ω @ 7.5A, 10V 3V @ 1mA 1770pF @ 10V 36nC @ 10V 13ns 62 ns 10V 15A Ta 60V 29 mJ 6V 10V +10V, -20V
IXTM15N60 IXTM15N60 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited) 2 ROHS3 Compliant ENHANCEMENT MODE BOTTOM PIN/PEG NO O-MBFM-P2 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-204AE DRAIN N-CHANNEL 250W SWITCHING 0.5Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 15A 300W
IRFD9120 IRFD9120 Rochester Electronics 0.0000
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0.00000000 download Tube no Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant 4-DIP (0.300, 7.62mm) unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) DUAL NOT SPECIFIED NOT SPECIFIED NO R-PDIP-T4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.3W Ta SWITCHING 0.6Ohm 100V SILICON P-Channel 600m Ω @ 600mA, 10V 4V @ 250μA 390pF @ 25V 18nC @ 10V 1A 1A Ta 100V 10V ±20V
2SK3309(TE24L,Q) 2SK3309(TE24L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) TO-220SM 65W Tc N-Channel 650mOhm @ 5A, 10V 5V @ 1mA 920pF @ 10V 23nC @ 10V 10A Ta 450V 10V ±30V
TK12A60U(Q,M) TK12A60U(Q,M) Toshiba Semiconductor and Storage 0.6509
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 400mOhm TO-220SIS 35W Tc 12A N-Channel 400mOhm @ 6A, 10V 5V @ 1mA 720pF @ 10V 14nC @ 10V 30ns 8 ns 30V 600V 12A Ta 600V 720pF 10V ±30V 400 mΩ
SSM3K35AMFV,L3F SSM3K35AMFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2017 U-MOSIII Active 1 (Unlimited) RoHS Compliant SOT-723 Surface Mount 150°C TJ MOSFET (Metal Oxide) VESM 500mW Ta N-Channel 1.1Ohm @ 150mA, 4.5V 1V @ 100μA 36pF @ 10V 0.34nC @ 4.5V 250mA Ta 20V 1.2V 4.5V ±10V
TK6A45DA(STA4,Q,M) TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage 5.9311
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W TO-220SIS 5.5A N-Channel 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 5.5A Ta 450V 490pF 10V ±30V 1.35 Ω
SSM3J14TTE85LF SSM3J14TTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2014 U-MOSII Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES Other Transistors Single 700mW Ta P-Channel 85m Ω @ 1.35A, 10V 413pF @ 15V 2.7A 2.7A Ta 30V 4V 10V ±20V
IPD60R2K0C6BTMA1 IPD60R2K0C6BTMA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) CoolMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-TO252-3 22.3W Tc N-Channel 2Ohm @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.4A Tc 600V 10V ±20V
C3M0065090J-TR C3M0065090J-TR Cree/Wolfspeed 0.0000
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C3M™ Active 3 (168 Hours) RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 65mOhm D2PAK-7 113W Tc N-Channel 78mOhm @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30nC @ 15V 35A Tc 900V 15V +19V, -8V
TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) DPAK+ 25W Tc 10A N-Channel 28mOhm @ 5A, 10V 3V @ 1mA 410pF @ 10V 10nC @ 10V 7ns 4 ns 20V 10A Ta 40V 410pF 6V 10V ±20V 28 mΩ
C3M0021120D C3M0021120D Cree/Wolfspeed 29.8198
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0.00000000 C3M™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-3 469W Tc N-Channel 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 4818pF @ 1000V 160nC @ 15V 100A Tc 1200V 15V +15V, -4V
TK5A65D(STA4,Q,M) TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 40W Tc 5A N-Channel 1.43 Ω @ 2.5A, 10V 4V @ 1mA 800pF @ 25V 16nC @ 10V 20ns 12 ns 30V 5A Ta 650V 10V ±30V
TK10A60W,S4X TK10A60W,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 30W Tc N-Channel 380mOhm @ 4.9A, 10V 3.7V @ 500μA 720pF @ 300V 20nC @ 10V 9.7A Ta 600V 10V ±30V
IRL2203NSPBF IRL2203NSPBF Infineon Technologies 0.0000
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 180W Tc SWITCHING 0.007Ohm 30V SILICON N-Channel 7m Ω @ 60A, 10V 3V @ 250μA 3290pF @ 25V 60nC @ 4.5V 75A 116A Tc 30V 400A 290 mJ 4.5V 10V ±16V
64-2105PBF 64-2105PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 200W Tc 75A N-Channel 3.7mOhm @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 75A Tc 40V 4.34nF 10V ±20V 3.7 mΩ
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-XSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 90W Tc 60A SWITCHING 0.0094Ohm 40V SILICON P-Channel 6.3m Ω @ 30A, 10V 3V @ 1mA 6510pF @ 10V 125nC @ 10V 96ns 240 ns 10V 60A Ta 40V 120A 146 mJ 6V 10V +10V, -20V
TK5A50D(STA4,Q,M) TK5A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 1.5Ohm TO-220SIS 35W Tc 5A N-Channel 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 500V 5A Ta 500V 490pF 10V ±30V 1.5 Ω
RUQ050N02HZGTR RUQ050N02HZGTR ROHM Semiconductor 0.7831
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0.00000000 8 Weeks Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 950mW Ta N-Channel 30m Ω @ 5A, 4.5V 1V @ 1mA 900pF @ 10V 12nC @ 4.5V 5A Ta 20V 1.5V 4.5V ±10V
SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage 0.3434
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 π-MOSVI Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 150mW Ta 100mA N-Channel 3 Ω @ 10mA, 4V 1.1V @ 100μA 9.3pF @ 3V 100mA Ta 20V 1.5V 4V ±10V
TK22A65X5,S5X TK22A65X5,S5X Toshiba Semiconductor and Storage 5.5368
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0.00000000 12 Weeks Active 1 (Unlimited)
IXTN660N04T4 IXTN660N04T4 IXYS / Littelfuse 0.0000
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0.00000000 download 28 Weeks Chassis Mount Tube 2016 TrenchT4™ yes Active 1 (Unlimited) ROHS3 Compliant SOT-227-4, miniBLOC unknown Chassis Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1040W Tc 660A N-Channel 0.85m Ω @ 100A, 10V 4V @ 250μA 44000pF @ 25V 860nC @ 10V Current Sensing 660A Tc 40V 10V ±15V
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