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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Number of Elements JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IXFN32N100Q3 IXFN32N100Q3 IXYS 0.0000
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0.00000000 download 30 Weeks Chassis Mount, Panel Tube 2012 HiPerFET™ Active 1 (Unlimited) 4 38.23mm ROHS3 Compliant 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC unknown 9.6mm 25.07mm Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 FET General Purpose Power 1 ISOLATED Single 780W 45 ns 780W Tc 28A SWITCHING 0.32Ohm 54 ns SILICON N-Channel 320m Ω @ 16A, 10V 6.5V @ 8mA 9940pF @ 25V 195nC @ 10V 300ns 30V 1kV 28A Tc 1000V 96A 3000 mJ 10V ±30V
IRFR5410TRPBF IRFR5410TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin -13A No 3 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 205mOhm Surface Mount -55°C~150°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 Other Transistors 1 TO-252AA DRAIN Single 66W 15 ns -4V 66W Tc 190 ns -13A 150°C SWITCHING 45 ns SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 13A Tc 100V 52A 10V ±20V
SI5402BDC-T1-E3 SI5402BDC-T1-E3 Vishay Siliconix 2.8177
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 TrenchFET® yes Obsolete 1 (Unlimited) 8 EAR99 3.0988mm ROHS3 Compliant Lead Free No 8 8-SMD, Flat Lead No SVHC 1.0922mm 1.7018mm 35mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 30 8 FET General Purpose Powers 1 Single 2.5W 10 ns 20V 1.3W Ta 6.7A 27 ns SILICON N-Channel 35m Ω @ 4.9A, 10V 3V @ 250μA 20nC @ 10V 10ns 10 ns 20V 30V 4.9A 4.9A Ta 20A 4.5V 10V ±20V
RJK5013DPE-00#J3 RJK5013DPE-00#J3 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) ROHS3 Compliant 83 SC-83 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 100W Tc 14A N-Channel 465m Ω @ 7A, 10V 1450pF @ 25V 38nC @ 10V 14A Ta 500V 10V ±30V
STV270N4F3 STV270N4F3 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 7 months ago) Surface Mount Tape & Reel (TR) STripFET™ III Active 1 (Unlimited) 10 EAR99 ROHS3 Compliant Lead Free No 10 PowerSO-10 Exposed Bottom Pad 1.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed DUAL GULL WING 250 30 STV270 10 FET General Purpose Power 1 DRAIN Single 300W 25 ns 300W Tc 270A SWITCHING 110 ns SILICON N-Channel 1.5m Ω @ 80A, 10V 4V @ 250μA 7500pF @ 25V 150nC @ 10V 180ns 45 ns 20V 40V 270A Tc 10V ±20V
SSM5N15FU,LF SSM5N15FU,LF Toshiba Semiconductor and Storage 0.3450
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0.00000000 16 Weeks Cut Tape (CT) 2014 π-MOSVI Discontinued 1 (Unlimited) RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 Surface Mount 150°C TJ MOSFET (Metal Oxide) 200mW Ta N-Channel 4 Ω @ 10mA, 4V 7.8pF @ 3V 100mA Ta 30V 2.5V 4V ±20V
IRFR214TRLPBF IRFR214TRLPBF Vishay Siliconix 0.8092
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) 150°C -55°C 6.73mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 2.5W 7 ns 2Ohm D-Pak 2.5W Ta 25W Tc 2.2A 16 ns N-Channel 2Ohm @ 1.3A, 10V 4V @ 250μA 140pF @ 25V 8.2nC @ 10V 7.6ns 7 ns 20V 2.2A Tc 250V 140pF 10V ±20V 2 Ω
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