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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Power Dissipation Turn On Delay Time Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Capacitance - Input
IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 LOGIC LEVL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 125W 14 ns 100V 125W Tc 69A SWITCHING 39 ns SILICON N-Channel 12m Ω @ 69A, 10V 2.4V @ 83μA 5600pF @ 50V 58nC @ 10V 9ns 5 ns 20V 69A Tc 276A 4.5V 10V ±20V
IPB50CN10NGATMA1 IPB50CN10NGATMA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 44W Tc 20A SWITCHING 0.05Ohm 100V SILICON N-Channel 50m Ω @ 20A, 10V 4V @ 20μA 1090pF @ 50V 16nC @ 10V 20A Tc 100V 80A 29 mJ 10V ±20V
IPB240N04S41R0ATMA1 IPB240N04S41R0ATMA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 231W Tc 240A 0.001Ohm SILICON N-Channel 1m Ω @ 100A, 10V 4V @ 180μA 17682pF @ 25V 221nC @ 10V 240A Tc 960A 750 mJ 10V ±20V
SPD30P06PGBTMA1 SPD30P06PGBTMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Not Halogen Free 125W 13 ns -60V 125W Tc 30A 0.075Ohm 30 ns SILICON P-Channel 75m Ω @ 21.5A, 10V 4V @ 1.7mA 1535pF @ 25V 48nC @ 10V 11ns 20 ns 20V 30A Tc 60V 250 mJ 10V ±20V
TPC8012-H(TE12L,Q) TPC8012-H(TE12L,Q) Toshiba 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2001 150°C -55°C RoHS Compliant Lead Free 1.8A 8 SOP unknown 200V 1.9W 1.8A 23ns 23 ns 30V 200V 200V 400 mΩ 440pF
HUFA75337S3ST HUFA75337S3ST ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2002 UltraFET™ Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK (TO-263AB) 175W Tc N-Channel 14mOhm @ 75A, 10V 4V @ 250μA 1775pF @ 25V 109nC @ 20V 75A Tc 55V 10V ±20V
PSMN2R9-30MLC,115 PSMN2R9-30MLC,115 Nexperia USA Inc. 0.0000
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0.00000000 download 26 Weeks Tape & Reel (TR) 2012 Active 1 (Unlimited) 4 ROHS3 Compliant No 8 SOT-1210, 8-LFPAK33 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 8 YES R-PSSO-G4 1 SINGLE WITH BUILT-IN DIODE DRAIN 91W 17.7 ns 30V 91W Tc 70A SWITCHING 24.6 ns SILICON N-Channel 2.9m Ω @ 25A, 10V 2.15V @ 1mA 2419pF @ 15V 36.1nC @ 10V 30.8ns 19.3 ns 20V 70A Tc 523A 75 mJ 4.5V 10V ±20V
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