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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
DMN2056U-7 DMN2056U-7 Diodes Incorporated 0.0000
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0.00000000 download 17 Weeks Tape & Reel (TR) 2016 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 940mW N-Channel 38m Ω @ 3.6A, 4.5V 1V @ 250μA 339pF @ 10V 4.3nC @ 4.5V 4A Ta 20V 1.5V 4.5V ±8V
IPD60R380E6ATMA2 IPD60R380E6ATMA2 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Bulk 2008 CoolMOS™ Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 600V PG-TO252-3 83W Tc 10.6A N-Channel 380mOhm @ 3.8A, 10V 3.5V @ 300μA 700pF @ 100V 32nC @ 10V Super Junction 10.6A Tc 600V 700pF 10V ±20V 380 mΩ
TK42E12N1,S1X TK42E12N1,S1X Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 140W 140W Tc 88A 64 ns N-Channel 9.4m Ω @ 21A, 10V 4V @ 1mA 3100pF @ 60V 52nC @ 10V 18ns 22 ns 20V 120V 88A Tc 10V ±20V
2N7002W-7 2N7002W-7 Diodes Incorporated 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 no Discontinued 1 (Unlimited) 3 EAR99 2.2mm Non-RoHS Compliant Contains Lead 115mA 3 SC-70, SOT-323 No SVHC not_compliant 1mm 1.35mm Surface Mount 6.208546mg -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 DUAL GULL WING 235 10 3 1 FET General Purpose Power Not Qualified 1 Single 200mW 7 ns 200mW Ta 115mA SWITCHING 11 ns SILICON N-Channel 7.5 Ω @ 50mA, 5V 2V @ 250μA 50pF @ 25V 20V 70V 115mA Ta 5 pF 5V 10V ±20V
STF20NF20 STF20NF20 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 8 months ago) Through Hole Tube STripFET™ Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free 18A No 3 TO-220-3 Full Pack No SVHC 16.4mm 4.6mm 100mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) STF20 3 FET General Purpose Power 1 TO-220AB ISOLATED Single 30W 15 ns 3V 30W Tc 18A SWITCHING 40 ns SILICON N-Channel 125m Ω @ 10A, 10V 4V @ 250μA 940pF @ 25V 39nC @ 10V 30ns 10 ns 20V 200V 18A Tc 72A 10V ±20V
IRF6616TRPBF IRF6616TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 19A No 5 DirectFET™ Isometric MX No SVHC 508μm 5.0546mm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 15 ns 1.8V 2.8W Ta 89W Tc 15A SWITCHING 21 ns SILICON N-Channel 5m Ω @ 19A, 10V 2.25V @ 250μA 3765pF @ 20V 44nC @ 4.5V 19ns 4.4 ns 20V 40V 19A Ta 106A Tc 36 mJ 4.5V 10V ±20V
IRFP4768PBF IRFP4768PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 17.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-247AC DRAIN Single 520W 36 ns 5V 520W Tc 93A SWITCHING 57 ns SILICON N-Channel 17.5m Ω @ 56A, 10V 5V @ 250μA 10880pF @ 50V 270nC @ 10V 160ns 110 ns 20V 250V 250V 5 V 93A Tc 770 mJ 10V ±20V
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