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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Power Dissipation-Max Number of Terminals Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
SPW11N80C3FKSA1 SPW11N80C3FKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 156W Tc SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A 11A Tc 800V 33A 470 mJ 10V ±20V
GP1M006A070F GP1M006A070F Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
IRFS38N20DPBF IRFS38N20DPBF Infineon Technologies 0.0000
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0.00000000 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 300W Tc SWITCHING 0.054Ohm 200V SILICON N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 43A 43A Tc 200V 180A 460 mJ 10V ±20V
2SK4096LS 2SK4096LS ON SEMICONDUCTOR 0.0000
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0.00000000 [object Object] RoHS Compliant HIGH RELIABILITY ENHANCEMENT MODE 8541.29.00.95 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) SINGLE THROUGH-HOLE 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 3 SWITCHING 0.85Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 8A 32A 397 mJ
NVTP2955G NVTP2955G Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) Non-RoHS Compliant
FQPF7N60 FQPF7N60 ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 1 week ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 4.3A No 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole 2.27g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) FET General Purpose Power 1 ISOLATED Single 48W 30 ns 48W Tc 4.3A SWITCHING 1Ohm 65 ns SILICON N-Channel 1 Ω @ 2.2A, 10V 5V @ 250μA 1430pF @ 25V 38nC @ 10V 80ns 60 ns 30V 600V 4.3A Tc 580 mJ 10V ±30V
FDN86265P FDN86265P ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) 2017 PowerTrench® yes Active 1 (Unlimited) 3 EAR99 2.92mm ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 940μm 1.4mm Surface Mount 30mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 NOT SPECIFIED 1 Other Transistors 1 Single 5.7 ns 1.5W Ta 800mA SWITCHING 7.9 ns SILICON P-Channel 1.2 Ω @ 800mA, 10V 4V @ 250μA 210pF @ 75V 4.1nC @ 10V 2.2ns 9.9 ns 25V 0.8A 800mA Ta 150V 5 pF 6V 10V ±25V
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