Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IGW30N60TFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tube | 2007 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FAST SWITCHING | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | *GW30N60 | 3 | NO | R-PSFM-T3 | Not Qualified | 187W | 1 | SINGLE | TO-247AC | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 50 ns | 2.05V @ 15V, 30A | 382 ns | Trench Field Stop | 600V | 60A | 400V, 30A, 10.6 Ω, 15V | 167nC | 90A | 23ns/254ns | 1.46mJ | |||||||||||||||||||||||||||||||||||||||||
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APT30GP60BDQ1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 30A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 463W | 463W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 165 ns | PT | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
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IGU04N60TAKMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2007 | TrenchStop™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 42W | 42W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 8A | 600V | 600V | POWER CONTROL | SILICON | 24 ns | 2.05V @ 15V, 4A | 268 ns | Trench | 400V, 4A, 47 Ω, 15V | 27nC | 12A | 14ns/164ns | 61μJ (on), 84μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
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RJH60D6DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | RJH60D | 3 | 50W | 50W | Single | 50 ns | 100 ns | 80A | 600V | 2.2V | 160 ns | 2.2V @ 15V, 40A | Trench | 300V, 40A, 5 Ω, 15V | 104nC | 50ns/160ns | 850μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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STGW35NC60WD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | STGW35 | 3 | Insulated Gate BIP Transistors | 260W | 260W | 1 | TO-247AC | N-CHANNEL | Single | 250W | 40 ns | 70A | 600V | 600V | POWER CONTROL | SILICON | 12ns | 2.5V | 42.5 ns | 2.6V @ 15V, 20A | 197 ns | 20V | 5.75V | 390V, 20A, 10 Ω, 15V | 102nC | 150A | 29.5ns/118ns | 305μJ (on), 181μJ (off) | |||||||||||||||||||||||||||||||||||||||||
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IXGH12N60BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*12N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 35 ns | 24A | 600V | 600V | POWER CONTROL | SILICON | 2.1V @ 15V, 12A | 20V | 5V | 270ns | 480V, 12A, 18 Ω, 15V | 32nC | 48A | 20ns/150ns | 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
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IXGQ240N30PB | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | Polar™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 5.500006g | -55°C~150°C TJ | Standard | e3 | PURE TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 500W | 500W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 240A | 300V | 1.85V | POWER CONTROL | SILICON | 133 ns | 1.6V @ 15V, 120A | 203 ns | 20V | 5V | 225nC | ||||||||||||||||||||||||||||||||||||||||||||
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FGA15N120ANTDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2006 | yes | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 15A | 3 | TO-3P-3, SC-65-3 | No SVHC | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | Insulated Gate BIP Transistors | 186W | N-CHANNEL | Single | 186W | 330ns | 30A | 1.2kV | 1.2kV | 15A | 1.2kV | 2.4V | 2.4V @ 15V, 15A | NPT and Trench | 20V | 1200V | 8.5V | 180ns | 600V, 15A, 10 Ω, 15V | 120nC | 45A | 15ns/160ns | 3mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N60IHLWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | LAST SHIPMENTS (Last Updated: 5 days ago) | Tube | 2005 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | 250W | 250W | 1 | Halogen Free | N-CHANNEL | Single | 400 ns | 80A | 600V | 600V | POWER CONTROL | SILICON | 2V | 110 ns | 2.4V @ 15V, 40A | 230 ns | Trench Field Stop | 400V, 40A, 10 Ω, 15V | 130nC | 200A | 70ns/140ns | 400μJ (off) | ||||||||||||||||||||||||||||||||||||||
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IRGP4266-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 450W | 450W | N-CHANNEL | Single | 140A | 650V | 2.1V | 105ns | 2.1V @ 15V, 75A | 20V | 7.7V | 55ns | 400V, 75A, 10 Ω, 15V | 210nC | 300A | 80ns/200ns | 3.2mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXBF20N360 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 | unknown | Through Hole | -55°C~150°C TJ | Standard | 230W | 230W | 1.7 μs | 45A | 3.6kV | 3.4V | 3.4V @ 15V, 20A | 3600V | 1500V, 20A, 10 Ω, 15V | 43nC | 220A | 18ns/238ns | 15.5mJ (on), 4.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXBT2N250 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | 32W | 32W | 1 | COLLECTOR | N-CHANNEL | Single | 920 ns | 5A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 310 ns | 3.5V @ 15V, 2A | 252 ns | 20V | 2500V | 5.5V | 10.6nC | 13A | ||||||||||||||||||||||||||||||||||||||||||
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APT25GR120BSCD10 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Through Hole | Tube | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIGC42T60UNX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 3.15V @ 15V, 50A | NPT | 600V | 50A | 400V, 50A, 6.8Ohm, 15V | 150A | 48ns/350ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HGTG30N60C3D | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 30A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.82mm | 4.82mm | Through Hole | 6.39g | -40°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | HGTG30N60 | 208W | 1 | NPN | Single | 208W | 40 ns | 60ns | 63A | 600V | 600V | MOTOR CONTROL | 320 ns | SILICON | 45ns | 1.5V | 85 ns | 1.8V @ 15V, 30A | 550 ns | 162nC | 252A | 1.05mJ (on), 2.5mJ (off) | ||||||||||||||||||||||||||||||||||
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IRG4IBC30UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2000 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 17A | No | 3 | ULTRA FAST SOFT RECOVERY | TO-220-3 Full Pack | No SVHC | 9.02mm | 4.826mm | Through Hole | 2.299997g | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 45W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 45W | 40 ns | 42 ns | 17A | 600V | 2.1V | POWER CONTROL | 91 ns | SILICON | 21ns | 1.95V | 62 ns | 2.1V @ 15V, 12A | 300 ns | 20V | 6V | 480V, 12A, 23 Ω, 15V | 50nC | 68A | 40ns/91ns | 380μJ (on), 160μJ (off) | ||||||||||||||||||||||||||||||||
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GPA020A135MN-FD | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3 | Through Hole | -55°C~150°C TJ | Standard | 223W | TO-3P | 425ns | 2.3V @ 15V, 20A | Trench Field Stop | 1350V | 40A | 600V, 20A, 10Ohm, 15V | 180nC | 60A | 25ns/175ns | 2.5mJ (on), 760μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGK50N90B2D1 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2006 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*50N90 | 3 | Not Qualified | 400W | 400W | 1 | COLLECTOR | N-CHANNEL | Single | 200 ns | 75A | 900V | 900V | POWER CONTROL | SILICON | 48 ns | 2.7V @ 15V, 50A | 820 ns | PT | 720V, 50A, 5 Ω, 15V | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| SIGC25T60NCX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIGC42T60SNCX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 50A | NPT | 600V | 50A | 400V, 50A, 6.8Ohm, 15V | 150A | 57ns/380ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXBH20N300 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.35 μs | 50A | 3kV | 3.2V | POWER CONTROL | SILICON | 608 ns | 3.2V @ 15V, 20A | 695 ns | 20V | 3000V | 5V | 105nC | 140A | ||||||||||||||||||||||||||||||||||||||||
| NGTG20N60L2TF1G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | EAR99 | 175°C | -55°C | 15.5mm | ROHS3 Compliant | Lead Free | No | 3 | No SVHC | 26.5mm | 5.5mm | e3 | Tin (Sn) | 3 | 64W | Halogen Free | Single | 64W | 40A | 600V | 600V | 1.65V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKP08N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | 15.95mm | 4.57mm | Through Hole | 6.000006g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 70W | 70W | Halogen Free | Single | 40 ns | 18A | 650V | 1.65V | 1.65V | 2.1V @ 15V, 8A | 400V, 4A, 48 Ω, 15V | 22nC | 24A | 11ns/115ns | 70μJ (on), 30μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
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IGW30N100TFKSA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | TrenchStop® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 412W | PG-TO247-3 | 1.9V @ 15V, 30A | Trench Field Stop | 1V | 60A | 600V, 30A, 16Ohm, 15V | 217nC | 90A | 33ns/535ns | 3.8mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGR4610DPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GPA030A135MN-FDR | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3 | Through Hole | -55°C~150°C TJ | Standard | 329W | TO-3PN | 450ns | 2.4V @ 15V, 30A | Trench Field Stop | 1350V | 60A | 600V, 30A, 5Ohm, 15V | 300nC | 90A | 30ns/145ns | 4.4mJ (on), 1.18mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXBF9N160G | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | 2006 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | HIGH RELIABILITY | i4-Pac™-5 (3 Leads) | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 70W | 70W | 1 | ISOLATED | N-CHANNEL | Single | 7A | 1.6kV | 1.6kV | POWER CONTROL | SILICON | 4.9V | 140 ns | 7V @ 15V, 5A | 120 ns | 1600V | 960V, 5A, 27 Ω, 10V | 34nC | |||||||||||||||||||||||||||||||||||||||||||||
| RGS60TS65HRC11 | ROHM Semiconductor | 8.0922 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Active | 1 (Unlimited) | RoHS Compliant | TO-247-3 | compliant | Through Hole | -40°C~175°C TJ | Standard | 223W | 2.1V @ 15V, 30A | Trench Field Stop | 650V | 56A | 400V, 30A, 10 Ω, 15V | 36nC | 90A | 28ns/104ns | 660μJ (on), 810μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RJH60D5DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60D | 3 | 45W | 45W | 100 ns | 75A | 600V | 2.2V | 2.2V @ 15V, 37A | Trench | 300V, 37A, 5 Ω, 15V | 78nC | 50ns/135ns | 650μJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXXH50N60C3 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~175°C TJ | Standard | SINGLE | IXX*N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 600W | 1 | SINGLE | TO-247AD | N-CHANNEL | 600W | 100A | 600V | 2.3V | POWER CONTROL | SILICON | 2.3V | 69 ns | 2.3V @ 15V, 36A | 170 ns | PT | 20V | 5.5V | 360V, 36A, 5 Ω, 15V | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) |
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