Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SGP15N120XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tube | 2008 | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 198W | 1 | SINGLE | TO-220AB | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 68 ns | 3.6V @ 15V, 15A | 683 ns | NPT | 1200V | 30A | 800V, 15A, 33 Ω, 15V | 130nC | 52A | 18ns/580ns | 1.9mJ | |||||||||||||||||||||||||||||||||||||||
 |
SKW20N60FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | *KW20N60 | 3 | 179W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 179W | 300 ns | 40A | 600V | 600V | POWER CONTROL | SILICON | 36ns | 66 ns | 2.4V @ 15V, 20A | 313 ns | NPT | 400V, 20A, 16 Ω, 15V | 100nC | 80A | 36ns/225ns | 440μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
GA35XCP12-247 | GeneSiC Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | Obsolete | 1 (Unlimited) | RoHS Compliant | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | Insulated Gate BIP Transistors | N-CHANNEL | 36 ns | 1.2kV | 3V | 3V | 3V @ 15V, 35A | PT | 20V | 1200V | 6.5V | 800V, 35A, 22 Ω, 15V | 50nC | 35A | 2.66mJ (on), 4.35mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG8P75N65UD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Not Applicable | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT80TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 234W | 234W | 1 | N-CHANNEL | Single | 58 ns | 70A | 650V | 650V | POWER CONTROL | SILICON | 1.65V | 90 ns | 2.1V @ 15V, 40A | 206 ns | Trench Field Stop | 40A | 400V, 40A, 10 Ω, 15V | 79nC | 120A | 34ns/119ns | |||||||||||||||||||||||||||||||||||||||
 |
MMIX1X100N60B3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 21 | ROHS3 Compliant | AVALANCHE RATED | 24-PowerSMD, 21 Leads | Surface Mount | -55°C~150°C TJ | Standard | DUAL | GULL WING | IXX*N60 | R-PDSO-G21 | Insulated Gate BIP Transistors | 250W | 400W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 140 ns | 105A | 600V | 1.8V | POWER CONTROL | SILICON | 92 ns | 1.8V @ 15V, 70A | 350 ns | 20V | 145A | 5.5V | 360V, 70A, 2 Ω, 15V | 143nC | 440A | 30ns/120ns | 1.9mJ (on), 2mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
SIGC18T60SNCX1SA4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 20A | NPT | 600V | 20A | 400V, 20A, 16Ohm, 15V | 60A | 36ns/250ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKW30N65ES5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 188W | 188W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 75 ns | 62A | 650V | 650V | POWER CONTROL | SILICON | 30 ns | 1.7V @ 15V, 30A | 204 ns | Trench | 400V, 30A, 13 Ω, 15V | 70nC | 120A | 17ns/124ns | 560μJ (on), 320μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
FGH40N60SMD-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2016 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 349W | 349W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 47 ns | 80A | 600V | 600V | POWER CONTROL | SILICON | 2.1V | 43.7 ns | 2.5V @ 15V, 40A | 172.5 ns | Field Stop | 20V | 6V | 81ns | 400V, 40A, 6 Ω, 15V | 180nC | 120A | 18ns/110ns | 920μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||
|
FGH40N65UFDTU-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Through Hole | Tube | 2016 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.39g | -55°C~150°C TJ | Standard | 290W | 290W | Single | 65 ns | 80A | 650V | 2.4V | 2.4V @ 15V, 40A | Field Stop | 400V, 40A, 10 Ω, 15V | 119nC | 120A | 23ns/126ns | 1.28mJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IHW30N120R2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2009 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Insulated Gate BIP Transistors | Not Qualified | 390W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 390W | 30A | 1.2kV | 1.8V | SILICON | 2V | 1.8V @ 15V, 30A | 900 ns | NPT, Trench Field Stop | 20V | 1200V | 60A | 6.4V | 600V, 30A, 28 Ω, 15V | 198nC | 90A | -/792ns | 3.1mJ | |||||||||||||||||||||||||||||||||
|
IRG4BAC50W-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2017 | Obsolete | 1 (Unlimited) | TO-273AA | Through Hole | Standard | 200W | 2.3V @ 15V, 27A | 600V | 55A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG8P45N65UD1-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2013 | Obsolete | Not Applicable | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH24N60C4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 190W | 190W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 56A | 600V | 2.7V | POWER CONTROL | SILICON | 52 ns | 2.7V @ 15V, 24A | 248 ns | PT | 20V | 5V | 360V, 24A, 10 Ω, 15V | 64nC | 130A | 21ns/143ns | 400μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IXA17IF1200HJ | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.13mm | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | 21.34mm | 5.21mm | Through Hole | -40°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 1 | TO-247AD | ISOLATED | N-CHANNEL | Single | 100W | 350 ns | 28A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 1.8V | 110 ns | 2.1V @ 15V, 15A | 350 ns | PT | 20V | 1200V | 6.5V | 600V, 15A, 56 Ω, 15V | 47nC | 1.55mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||
 |
HGT1S10N120BNST | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 35A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~150°C TJ | 1.2kV | Standard | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | HGT1S10N120 | R-PSSO-G2 | Insulated Gate BIP Transistors | 298W | 1 | COLLECTOR | N-CHANNEL | Single | 298W | 1.2kV | 35A | 1.2kV | 1.2kV | 15ns | MOTOR CONTROL | SILICON | 2.7V | 32 ns | 2.7V @ 15V, 10A | 330 ns | NPT | 20V | 1200V | 55A | 200ns | 960V, 10A, 10 Ω, 15V | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | |||||||||||||||||||
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SIGC42T60UNX7SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 3.15V @ 15V, 50A | NPT | 600V | 50A | 400V, 50A, 6.8Ohm, 15V | 150A | 48ns/350ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKP40N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | 15.95mm | 4.57mm | Through Hole | 6.000006g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 255W | 255W | Halogen Free | Single | 62 ns | 74A | 650V | 1.65V | 1.65V | 2.1V @ 15V, 40A | 400V, 20A, 15 Ω, 15V | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IXGK120N120B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 830W | 830W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 200A | 1.2kV | 3V | POWER CONTROL | SILICON | 122 ns | 3V @ 15V, 100A | 885 ns | PT | 20V | 1200V | 5V | 600V, 100A, 2 Ω, 15V | 470nC | 370A | 36ns/275ns | 5.5mJ (on), 5.8mJ (off) |
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SGP15N120XKSA1 Infineon Technologies
SGP15N120XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
SKW20N60FKSA1 Infineon Technologies
SKW20N60FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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IRG8P75N65UD1PBF Infineon Technologies
IRG8P75N65UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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SIGC18T60SNCX1SA4 Infineon Technologies
SIGC18T60SNCX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
IKW30N65ES5XKSA1 Infineon Technologies
IKW30N65ES5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
FGH40N60SMD-F085 ON Semiconductor
FGH40N60SMD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
Price: 0.0000
RFQ -
FGH40N65UFDTU-F085 ON Semiconductor
FGH40N65UFDTU-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
Price: 0.0000
RFQ -
IHW30N120R2 Infineon Technologies
IHW30N120R2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
IRG4BAC50W-SPBF Infineon Technologies
IRG4BAC50W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
IRG8P45N65UD1-EPBF Infineon Technologies
IRG8P45N65UD1-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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IXA17IF1200HJ IXYS / Littelfuse
IXYS SEMICONDUCTOR IXA17IF1200HJ IGBT Single Transistor, 28 A, 2.1 V, 100 W, 1.2 kV, TO-247AD, 3 Pins
Price: 0.0000
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HGT1S10N120BNST ON Semiconductor
HGT1S10N120BNST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
Price: 0.0000
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SIGC42T60UNX7SA2 Infineon Technologies
SIGC42T60UNX7SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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IKP40N65H5XKSA1 Infineon Technologies
IKP40N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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