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Transistors - FETs, MOSFETs - Single
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Contact Plating | Radiation Hardening | Number of Pins | Package / Case | Height | Width | Mounting Type | Weight | Operating Temperature | Technology | Type | Number of Channels | Number of Elements | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Turn-Off Delay Time | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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STP6NK60ZFP | STMicroelectronics | 0.0000 |
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CSD19536KTT | Texas Instruments | 0.0000 |
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bsc025n08ls5atma1 | 0.0000 |
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SIHB30N60AEL-GE3 | Vishay Siliconix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | EL | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Parameter | TO-263 (D2Pak) | 250W Tc | N-Channel | 120mOhm @ 15A, 10V | 4V @ 250μA | 2565pF @ 100V | 120nC @ 10V | 28A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||
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XX630A1NCM12 | Telemecanique | 0.0000 |
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AON7254 | Hirose Electric | 0.0000 |
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SQJA81EP-T1_GE3 | 0.0000 |
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SPA04N80C3XKSA1 | Infineon Technologies | 0.0000 |
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SI7820DN-T1-E3 | Vishay | 0.0000 |
Min: 1 Mult: 1 |
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SI5403DC-T1-GE3 | Vishay | 0.0000 |
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STB80NF55-06T4 | STMicroelectronics | 0.0000 |
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FDN5618P | onsemi | 0.0000 |
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SQ4401EY-T1-GE3 | Vishay Siliconix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | Parameter | 1 | 1 | Single | 1.8W | 58 ns | -2V | 11mOhm | 8-SO | 7.14W Tc | 17.3A | 67 ns | P-Channel | 14mOhm @ 10.5A, 10V | 4250pF @ 20V | 115nC @ 10V | 76ns | 44 ns | 20V | -40V | -2 V | 17.3A Tc | 40V | 4.25nF | 4.5V 10V | ±20V | 14 mΩ | |||
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SZ4-10.00-W305-F5PD54-2 | Bivar Inc. | 0.0000 |
Min: 1 Mult: 1 |
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STB55NF06T4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
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IPP60R180P7 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube-packed | RoHS Compliant | PG-TO220-3 | Parameter | |||||||||||||||||||||||||||||||||||||||||||||||
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TK100E10N1 | Toshiba Semiconductor and Storage | 0.0000 |
Min: 1 Mult: 1 |
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SI7820DN-T1-GE3 | Vishay | 0.0000 |
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CSD17313Q2T | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
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UT3401G-AE3-R | UTC(Unisonic Tech) | 0.0364 |
Min: 1 Mult: 1 |
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CSD19536KTT Texas Instruments
Single, 2.4mΩ, 100V, N-Channel NexFET™ Power MOSFET in D2PAK Package
Price: 0.0000
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XX630A1NCM12 Telemecanique
XX630A1NCM12 datasheet pdf and Current Sensors product details from Telemecanique stock available at HK JDW
Price: 0.0000
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SQ4401EY-T1-GE3 Vishay Siliconix
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 14mOhm @ 10.5A, 10V ±20V 4250pF @ 20V 115nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)
Price: 0.0000
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STB55NF06T4 STMicroelectronics
STB55NF06T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW
Price: 0.0000
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TK100E10N1 Toshiba Semiconductor and Storage
Power MOSFET (N-ch single 60V VDSS 150V)
Price: 0.0000
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CSD17313Q2T Texas Instruments
Single, 32mΩ, 30V, N-Channel NexFET™ Power MOSFET in 2mm x 2mm SON Package
Price: 0.0000
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