Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRGIB4620DPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~175°C TJ | Standard | 140W | TO-220 Full Pack | 68ns | 1.85V @ 15V, 12A | NPT | 600V | 32A | 400V, 12A, 22Ohm, 15V | 25nC | 36A | 31ns/83ns | 185μJ (on), 355μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGB8207NT4G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2007 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Logic | e3 | Tin (Sn) | GULL WING | 260 | 40 | NGB8207 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 165W | 165W | 1 | COLLECTOR | N-CHANNEL | Single | 20A | 365V | 365V | 2700ns | AUTOMOTIVE IGNITION | SILICON | 2450 ns | 2.6V @ 4V, 20A | 14700 ns | 15V | 2V | 15000ns | 50A | |||||||||||||||||||||||||||||||||||||||||
 |
FGY75T120SQDN | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 48 Weeks | Tube | yes | Active | Not Applicable | Non-RoHS Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 790W | 99ns | 1.95V @ 15V, 75A | Field Stop | 1200V | 150A | 600V, 75A, 10 Ω, 15V | 399nC | 300A | 64ns/332ns | 6.25mJ (on), 1.96mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IHW30N90TFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | 2008 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | HIGH SPEED | TO-247-3 | compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 428W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 82 ns | 1.7V @ 15V, 30A | 691 ns | Trench Field Stop | 900V | 60A | 600V, 30A, 15 Ω, 15V | 280nC | 90A | 45ns/556ns | 1.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IGC15T65QEX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 650V | 650V | 650V | 2.32V @ 15V, 30A | Trench Field Stop | 30A | 90A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IGC11T60TEX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGX100N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 830W | 1 | COLLECTOR | N-CHANNEL | Single | 830W | 170A | 1.7kV | 3V | POWER CONTROL | SILICON | 2.5V | 285 ns | 3V @ 15V, 100A | 720 ns | NPT | 20V | 1700V | 5V | 425nC | 600A | |||||||||||||||||||||||||||||||||||||||||||
 |
GT30J121(Q) | Toshiba Semiconductor and Storage | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | No | 3 | TO-3P-3, SC-65-3 | Through Hole | Standard | 170W | Single | 30A | 600V | 600V | 2.45V @ 15V, 30A | 300V, 30A, 24 Ω, 15V | 60A | 90ns/300ns | 1mJ (on), 800μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH1BF7RDPQ-80#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 150°C TJ | Standard | 250W | 250W | Single | 60A | 1.1kV | 1.1kV | 2.35V @ 15V, 60A | 1100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGQ20N120BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | unknown | Through Hole | 5.500006g | -55°C~150°C TJ | Standard | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | IXG*20N120 | 2 | Insulated Gate BIP Transistors | Not Qualified | 190W | 190W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 40A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 43 ns | 3.4V @ 15V, 20A | 630 ns | 20V | 1200V | 5V | 960V, 20A, 10 Ω, 15V | 62nC | 100A | 20ns/270ns | 2.1mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IRG4PSH71KPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2004 | Obsolete | 1 (Unlimited) | Through Hole | 150°C | -55°C | RoHS Compliant | Lead Free | 78A | 3 | TO-274AA | No SVHC | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | 350W | 350W | Single | 350W | SUPER-247™ (TO-274AA) | 78A | 1.2kV | 3.9V | 38ns | 3.9V | 3.9V @ 15V, 42A | 1200V | 78A | 960V, 42A, 5Ohm, 15V | 410nC | 156A | 45ns/220ns | 2.35mJ (on), 3.14mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXSH15N120B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | FAST SWITCHING, LOW SWITCHING LOSSES | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXS*15N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | N-CHANNEL | Single | 30A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.4V | 55 ns | 3.4V @ 15V, 15A | 563 ns | PT | 20V | 1200V | 6V | 960V, 15A, 10 Ω, 15V | 57nC | 60A | 30ns/148ns | 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IRGP4063D1-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | 20.7mm | 5.13mm | Through Hole | -40°C~175°C TJ | Standard | IRGP4063D | Insulated Gate BIP Transistors | 330W | 330W | N-CHANNEL | Single | 80 ns | 100A | 600V | 2.14V | 2.14V @ 15V, 48A | 20V | 6.5V | 400V, 48A, 10 Ω, 15V | 150nC | 192A | 60ns/160ns | 1.4mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGC15B60KB | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Die | Surface Mount | Standard | e0 | Tin/Lead (Sn/Pb) | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | O-XUUC-N | Not Qualified | 1 | SINGLE | N-CHANNEL | MOTOR CONTROL | SILICON | 1.35V @ 15V, 3A | NPT | 600V | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60F0DPK-00#T0 | Renesas Electronics America | 24.1403 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | SINGLE | RJH60F | 2 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 201.6W | 201.6W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 140 ns | 50A | 600V | 1.82V | POWER CONTROL | SILICON | 1.82V @ 15V, 25A | Trench | 30V | 8V | 400V, 30A, 5 Ω, 15V | 46ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXEH40N120D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-3P-3 Full Pack | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 180 ns | 60A | 1.2kV | 3V | POWER CONTROL | SILICON | 2.4V | 135 ns | 3V @ 15V, 40A | 490 ns | NPT | 20V | 1200V | 6.5V | 600V, 40A, 39 Ω, 15V | 150nC | 6.1mJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IKU06N60RBKMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2013 | TrenchStop® | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | 175°C | Insulated Gate BIP Transistors | Not Qualified | 100W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 100W | 68ns | POWER CONTROL | SILICON | 22 ns | 2.1V @ 15V, 6A | 335 ns | Trench | 20V | 600V | 12A | 5.7V | 400V, 6A, 23 Ω, 15V | 48nC | 18A | 12ns/127ns | 330μJ | |||||||||||||||||||||||||||||||||||||||||||||
 |
IHW50N65R5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2013 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 282W | 282W | 1 | Halogen Free | N-CHANNEL | Single | 95 ns | 80A | 650V | 650V | POWER CONTROL | SILICON | 51 ns | 1.7V @ 15V, 50A | 261 ns | 400V, 25A, 8 Ω, 15V | 230nC | 150A | 26ns/220ns | 740μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
|
IXGH28N90B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 51A | 900V | 900V | POWER CONTROL | SILICON | 65 ns | 2.7V @ 15V, 28A | 470 ns | 20V | 5V | 220ns | 720V, 28A, 4.7 Ω, 15V | 100nC | 120A | 30ns/100ns | 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
IHW15N120R3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 254W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 1.7V @ 15V, 15A | 460 ns | Trench | 1200V | 30A | 600V, 15A, 14.6 Ω, 15V | 165nC | 45A | -/300ns | 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IKP30N65H5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Through Hole | Tube | 2013 | TrenchStop™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 188W | 188W | 1 | TO-220AB | COLLECTOR | Halogen Free | N-CHANNEL | Single | 51 ns | 55A | 650V | 650V | POWER CONTROL | SILICON | 28 ns | 2.1V @ 15V, 30A | 224 ns | Trench | 400V, 15A, 23 Ω, 15V | 70nC | 90A | 19ns/177ns | 280μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IRGB4062DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.82mm | Through Hole | 6.000006g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 250W | 53 ns | 89 ns | 48A | 600V | 1.95V | POWER CONTROL | 115 ns | SILICON | 22ns | 1.65V | 64 ns | 1.95V @ 15V, 24A | 164 ns | Trench | 20V | 6.5V | 41ns | 400V, 24A, 10 Ω, 15V | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||
 |
IRG4BC30F-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount, Through Hole | Tube | 2000 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 10.5156mm | RoHS Compliant | Lead Free | 31A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 4.699mm | Surface Mount | 260.39037mg | -55°C~150°C TJ | 600V | Standard | IRG4BC30F-SPBF | 100W | 100W | Single | 100W | D2PAK | 31A | 600V | 1.8V | 15ns | 1.8V @ 15V, 17A | 600V | 31A | 480V, 17A, 23Ohm, 15V | 51nC | 120A | 21ns/200ns | 230μJ (on), 1.18mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
RJP60F0DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJP60F | 3 | Insulated Gate BIP Transistors | 40W | 40W | N-CHANNEL | Single | 50A | 600V | 1.82V | 1.82V @ 15V, 25A | Trench | 400V, 30A, 5 Ω, 15V | 46ns/70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGC75B120UB | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Die | Surface Mount | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | O-XUUC-N | Insulated Gate BIP Transistors | Not Qualified | 1 | SINGLE | N-CHANNEL | POWER CONTROL | SILICON | 3.5V @ 15V, 75A | NPT | 1200V | 75A | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYH40N90C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 600W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 600W | 105A | 900V | 900V | POWER CONTROL | SILICON | 2.2V | 81 ns | 2.5V @ 15V, 40A | 237 ns | 20V | 5.5V | 450V, 40A, 5 Ω, 15V | 74nC | 200A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
|
IRGI4056DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | 34W | 34W | Single | TO-220AB Full-Pak | 72 ns | 18A | 600V | 1.65V | 1.65V @ 15V, 9A | Trench | 600V | 18A | 400V, 9A, 22Ohm, 15V | 25nC | 27A | 34ns/84ns | 59μJ (on), 177μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXSH30N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2001 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXS*30N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 55A | 600V | 600V | POWER CONTROL | SILICON | 2V | 70 ns | 2V @ 15V, 30A | 520 ns | PT | 20V | 7V | 270ns | 480V, 30A, 4.7 Ω, 15V | 100nC | 110A | 30ns/150ns | 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
STGWA30H65FB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | HB | Active | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | STGWA30 | 260W | 2V @ 15V, 30A | Trench Field Stop | 650V | 60A | 400V, 30A, 10 Ω, 15V | 149nC | 120A | 37ns/146ns | 151mJ (on), 293mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH16N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | IXG*16N170 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 190W | 1 | TO-268AA | COLLECTOR | N-CHANNEL | Single | 190W | 45 ns | 32A | 1.7kV | 1.7kV | POWER CONTROL | 200 ns | SILICON | 2.7V | 90 ns | 3.5V @ 15V, 16A | 1600 ns | NPT | 20V | 1700V | 5V | 1100ns | 1360V, 16A, 10 Ω, 15V | 78nC | 80A | 45ns/400ns | 9.3mJ (off) |
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