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RF MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mfr Weight Voltage - Rated DC Operating Mode HTS Code Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Max Output Power Case Connection Current Rating (Amps) Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Breakdown Voltage Min Breakdown Voltage Supplier Device Package Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Transistor Element Material Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Highest Frequency Band Noise Figure Input Capacitance Power - Output Channel Type Mode of Operation Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height Package Length Package Width PCB changed Supplier Package ECCN (US) Military Output Power (W) Channel Mode Number of Elements per Chip Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Drain Source Resistance (mOhm) Typical Input Capacitance @ Vds (pF) Typical Reverse Transfer Capacitance @ Vds (pF) Typical Output Capacitance @ Vds (pF) Process Technology Typical Power Gain (dB) Maximum Frequency (MHz) Minimum Frequency (MHz) Typical Drain Efficiency (%) Maximum VSWR Maximum Gate Threshold Voltage (V) Maximum Gate Source Leakage Current (nA) Maximum IDSS (uA)
BLF9G38-10G BLF9G38-10G Ampleon 0.0000
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0.00000000 download Obsolete RoHS Compliant MOSFET 3 Single N 2-Carrier W-CDMA
BLF6G27S-45K,118 BLF6G27S-45K,118 Ampleon 0.0000
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0.00000000 download Tape and Reel MOSFET 3 Single N 1-Carrier N-CDMA
MRF5S19060MBR1 MRF5S19060MBR1 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2005 Obsolete 3 (168 Hours) Non-RoHS Compliant 65V TO-272BB not_compliant 1.93GHz~1.99GHz e0 Tin/Lead (Sn/Pb) MRF5S19060 14dB 750mA LDMOS 28V 12W
BLF888A,112 BLF888A,112 Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tray 2011 Not For New Designs 1 (Unlimited) 4 EAR99 ROHS3 Compliant 110V SOT539A unknown 860MHz ENHANCEMENT MODE FLAT NOT SPECIFIED NOT SPECIFIED BLF888 YES R-CDFM-F4 21dB IEC-60134 2 COMMON SOURCE, 2 ELEMENTS N-CHANNEL AMPLIFIER 110V METAL-OXIDE SEMICONDUCTOR SILICON 1.3A LDMOS (Dual), Common Source 50V 600W
BLP10H605 BLP10H605 Ampleon 0.0000
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0.00000000 download Active RoHS Compliant 12 Dual Common Source N CW 150 -65 Surface Mount 0.82 6 5 12 HVSON EP EAR99 No 5 Enhancement 2 104 11 LDMOS 22.4 1400 10 59.6(Max) 35 1.8(Typ) 60 0.6
BLF10H6600PS BLF10H6600PS Ampleon 0.0000
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0.00000000 download Active RoHS Compliant 5 Dual Common Source N Pulsed RF Class-AB|2-Tone Class-AB 225 -65 Surface Mount 4.7(Max) 32.77(Max) 10.29(Max) 5 SOT-539B EAR99 No 600(Typ) Enhancement 1 110 11 143(Typ)@6.15V 220@50V 1.2@50V 74@50V LDMOS 20.8|19.8 1000 400 58 40 2.4 280 2.8
BLF647P BLF647P Ampleon 0.0000
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0.00000000 download Active RoHS Compliant 5 Dual Common Source N CW Class-B|Pulsed RF|Class-AB|2-Tone Class-AB
BLF989EU BLF989EU Ampleon 0.0000
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0.00000000 download Active RoHS Compliant MOSFET 5 Dual Common Source N Class AB|DVB-T OFDM
CE3520K3-C1 CE3520K3-C1 CEL (California Eastern Laboratories) 0.0000
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0.00000000 download 7 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 4V 15mA 4-Micro-X 20GHz 13.8dB 10mA pHEMT FET 2V 0.8dB 125mW
BF909R,235 BF909R,235 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 1998 Obsolete 1 (Unlimited) ROHS3 Compliant 7V SOT-143R unknown 800MHz BF909 4 40mA 2013-06-14 00:00:00 15mA N-Channel Dual Gate 5V 2dB
ARF461BG ARF461BG Microsemi 0.0000
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0.00000000 download 25 Weeks IN PRODUCTION (Last Updated: 3 weeks ago) Through Hole Bulk 1998 yes Active 1 (Unlimited) 3 EAR99 150°C -55°C RoHS Compliant Contains Lead 1000V 6.5A No TO-247-3 65MHz ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 3 R-PSFM-T3 FET General Purpose Power 15dB 250W 1 SINGLE TO-247AD SOURCE 25μA 1kV 6.5A AMPLIFIER METAL-OXIDE SEMICONDUCTOR N-Channel 50V 150W
BLF278C,112 BLF278C,112 Ampleon 0.0000
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0.00000000 download Bulk Supplier Unconfirmed 5 Dual Common Source N CW Class-C|CW Class-AB|CW Class-B
BLC8G27LS-100AV BLC8G27LS-100AV Ampleon 0.0000
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0.00000000 download Active RoHS Compliant 7 Dual Common Source N 1-Carrier W-CDMA 225 -65 Surface Mount 4.01(Max) 20.7(Max) 9.91(Max) 7 DFM EAR99 No 17(Typ) Enhancement 2 65 13 LDMOS 15.5 2690 2490 45
BLC10G27LS-320AVT BLC10G27LS-320AVT Ampleon 0.0000
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0.00000000 download Active MOSFET 7 Dual Common Source N 1-Carrier W-CDMA
MRF6V3090NR5 MRF6V3090NR5 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2006 Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant 110V ESD PROTECTION TO-270AB 860MHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 MRF6V3090 YES R-PDFM-F4 225°C FET General Purpose Power Not Qualified 22dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 115V METAL-OXIDE SEMICONDUCTOR SILICON 350mA LDMOS 50V 18W
MRF6VP2600HR5-FR MRF6VP2600HR5-FR Freescale Semiconductor, Inc. (NXP Semiconductors) 0.0000
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0.00000000 - 110 V NI-1230 500MHz Freescale Semiconductor 25dB 50μA NI-1230 2.6 A LDMOS (Dual) 50 V - 600W
BLF2425M8L140J BLF2425M8L140J Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) 2011 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 65V SOT-502A unknown 2.45GHz ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED BLF2425 YES R-CDFM-F2 19dB IEC-60134 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 65V METAL-OXIDE SEMICONDUCTOR SILICON 1.3A LDMOS 28V 140W
BF1201,215 BF1201,215 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2000 Obsolete 1 (Unlimited) ROHS3 Compliant 10V TO-253-4, TO-253AA unknown 400MHz BF1201 4 29dB 30mA 2013-06-14 00:00:00 15mA N-Channel Dual Gate 5V 1dB
BLF2425M7LS100J BLF2425M7LS100J Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) Non-RoHS Compliant 65V SOT-502B 2.3GHz~2.4GHz BLF2425 18dB SOT502B 900mA LDMOS 28V 20W
AFT21S230SR5 AFT21S230SR5 NXP Semiconductors 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2006 Last Time Buy Not Applicable EAR99 ROHS3 Compliant 65V NI-780S 2.11GHz 8541.29.00.40 260 40 150°C FET General Purpose Power 16.7dB Single N-CHANNEL 161W METAL-OXIDE SEMICONDUCTOR 1.5A LDMOS 28V 50W
PTFA092213ELV4R250XTMA2 PTFA092213ELV4R250XTMA2 Infineon Technologies 0.0000
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0.00000000 Screw Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) 2 200°C -40°C RoHS Compliant 7 ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-CDFM-F2 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 65V METAL-OXIDE SEMICONDUCTOR 12V ULTRA HIGH FREQUENCY B
BF1202,215 BF1202,215 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2000 Obsolete 1 (Unlimited) ROHS3 Compliant 10V TO-253-4, TO-253AA unknown 400MHz BF1202 4 30.5dB 30mA 2013-06-14 00:00:00 12mA N-Channel Dual Gate 5V 0.9dB
VMMK-1218-BLKG VMMK-1218-BLKG Broadcom 0.0000
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0.00000000 download Surface Mount Strip 2008 Obsolete 2 (1 Year) 3 EAR99 150°C 1mm RoHS Compliant Lead Free 100mA No 3 0402 (1005 Metric) No SVHC 10GHz 250μm 500μm ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 260 40 FET RF Small Signal 9dB 300mW 1 SOURCE N-CHANNEL Single 300mW 100mA AMPLIFIER 5V HIGH ELECTRON MOBILITY GALLIUM ARSENIDE 1V 0.1A 5V 20mA E-pHEMT 3V 0.81dB 12dBm
MRF7S21150HR3 MRF7S21150HR3 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 65V SOT-957A 2.11GHz~2.17GHz 8541.29.00.75 MRF7S21150 17.5dB 1.35A LDMOS 28V 44W
BLF7G27L-135,112 BLF7G27L-135,112 Ampleon USA Inc. 0.0000
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0.00000000 13 Weeks Tray Obsolete 1 (Unlimited) SOT-502A 2.6GHz~2.7GHz BLF7G27 16.5dB 1.3A LDMOS 28V 25W
BLP0427M9S20Z BLP0427M9S20Z Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) Active 3 (168 Hours) ROHS3 Compliant 65V SOT-1482-1 400MHz~2.7GHz 19dB 1.4μA 100mA LDMOS 28V 20W
SD57120 SD57120 STMicroelectronics 0.0000
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0.00000000 NRND (Last Updated: 8 months ago) Screw Tube Obsolete 1 (Unlimited) 4 EAR99 200°C -65°C ROHS3 Compliant Lead Free 14A No 5 M252 960MHz 65V ENHANCEMENT MODE FLAT SD57120 2 R-PDFM-F4 FET General Purpose Power 14dB 236W 2 120W SOURCE N-CHANNEL Dual 236W 65V 14A AMPLIFIER METAL-OXIDE SEMICONDUCTOR 20V 65V 65V 800mA LDMOS 28V 169pF
MRF6S27085HR5 MRF6S27085HR5 Rochester Electronics 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant 68V SOT-957A 2.66GHz 15.5dB NI-780H-2L 900mA LDMOS 28V 20W
FDMC6676BZ FDMC6676BZ Fairchild (ON Semiconductor) 0.0000
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0.00000000 * Fairchild Semiconductor
J310G J310G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Bulk 2006 yes Obsolete 1 (Unlimited) 3 125°C -65°C 5.2mm RoHS Compliant Lead Free 60mA No 3 TO-226-3, TO-92-3 (TO-226AA) No SVHC 100MHz 5.33mm 4.19mm 453.59237mg 25V DEPLETION MODE 8541.21.00.75 e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM THROUGH-HOLE 260 40 J310 3 NO Other Transistors 16dB 350mW 1 Single 350mW -25V AMPLIFIER JUNCTION 25V 25V 2.5 pF 10mA N-Channel JFET 10V
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