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STS7C4F30L

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Manufacturer No:

STS7C4F30L

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STS7C4F30L

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

STS7C4F30L

Description:

STS7C4F30L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Utmel

Quantity:

In Stock : 11450

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STS7C4F30L

technical specifications, attributes, parameters and parts with similar specifications to STS7C4F30L .

  • Type
    Parameter
    Select All
  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    STripFET™

  • JESD-609 Code

    e4

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    NICKEL PALLADIUM GOLD

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    2W

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    7A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STS7C4

  • Pin Count

    8

  • Qualification Status

    Not Qualified

  • Number of Elements

    2

  • Configuration

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • Operating Mode

    ENHANCEMENT MODE

  • FET Type

    N and P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    22m Ω @ 3.5A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1050pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    7A 4A

  • Gate Charge (Qg) (Max) @ Vgs

    23nC @ 5V

  • Rise Time

    35ns

  • Drain to Source Voltage (Vdss)

    30V

  • Polarity/Channel Type

    N-CHANNEL AND P-CHANNEL

  • Continuous Drain Current (ID)

    4A

  • Drain Current-Max (Abs) (ID)

    7A

  • Drain-source On Resistance-Max

    0.026Ohm

  • DS Breakdown Voltage-Min

    30V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

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