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  • STL65DN3LLH5

STL65DN3LLH5

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Manufacturer No:

STL65DN3LLH5

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STL65DN3LLH5

Package:

8-PowerVDFN

Datasheet:

STL65DN3LLH5

Description:

STL65DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STL65DN3LLH5          Description


  The product adopts the fifth generation design rules of STMicroelectronics proprietary STripFET semiconductor technology. The lowest RDS (ON) * QG available in this chip-level package makes the device suitable for the most demanding DC-DC converter applications where high power density is required.


STL65DN3LLH5    Features


■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses


STL65DN3LLH5                Application


Switching applications

 

 

 




 


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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STL65DN3LLH5

technical specifications, attributes, parameters and parts with similar specifications to STL65DN3LLH5.

  • Type
    Parameter
    Select All
  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    76A

  • Number of Programmable I/O

    114

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Lifecycle Status

    OBSOLETE (Last Updated: 7 months ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerVDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    STripFET™ V

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Resistance

    6.5MOhm

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Max Power Dissipation

    60W

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STL65

  • Pin Count

    8

  • JESD-30 Code

    R-PDSO-N6

  • Number of Elements

    2

  • Interface

    CAN, I2C, I2S, SPI, UART, USART, USB

  • Memory Size

    768kB

  • Element Configuration

    Dual

  • RAM Size

    132kB

  • Memory Type

    FLASH

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    60W

  • Case Connection

    DRAIN

  • Watchdog Timer

    Yes

  • Data Bus Width

    32b

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    6.5m Ω @ 9.5A, 10V

  • Vgs(th) (Max) @ Id

    1.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1500pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    12nC @ 4.5V

  • Number of Timers/Counters

    14

  • Continuous Drain Current (ID)

    65A

  • Gate to Source Voltage (Vgs)

    22V

  • Core Architecture

    ARM

  • Max Frequency

    120MHz

  • Drain Current-Max (Abs) (ID)

    19A

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