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  • STL8DN6LF3

STL8DN6LF3

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Manufacturer No:

STL8DN6LF3

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STL8DN6LF3

Package:

8-PowerVDFN

Datasheet:

STL8DN6LF3

Description:

STL8DN6LF3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STL8DN6LF3         Description

 

The device is an N-channel power MOSFET developed by STripFET F3 technology. It aims to minimize on-resistance and gate charge to provide excellent switching performance.

 


STL8DN6LF3          Features

? AEC-Q101 qualified

? Logic level VGS(th)

? 175 ??C maximum junction temperature

? 100% avalanche rated

? Wettable flank package


STL8DN6LF3                Applications


? Switching applications

 

  



 




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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STL8DN6LF3

technical specifications, attributes, parameters and parts with similar specifications to STL8DN6LF3.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerVDFN

  • Number of Pins

    8

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    Automotive, AEC-Q101, STripFET™ III

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • ECCN Code

    EAR99

  • Subcategory

    FET General Purpose Powers

  • Max Power Dissipation

    65W

  • Base Part Number

    STL8

  • Number of Elements

    2

  • Power Dissipation

    65W

  • Turn On Delay Time

    9 ns

  • FET Type

    2 N-Channel (Dual)

  • Rds On (Max) @ Id, Vgs

    30m Ω @ 4A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    668pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    13nC @ 10V

  • Rise Time

    7.7ns

  • Drain to Source Voltage (Vdss)

    60V

  • Fall Time (Typ)

    5 ns

  • Turn-Off Delay Time

    32.5 ns

  • Continuous Drain Current (ID)

    20A

  • Gate to Source Voltage (Vgs)

    20V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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