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STQ1HNK60R-AP

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Manufacturer No:

STQ1HNK60R-AP

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STQ1HNK60R-AP

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

STQ1HNK60R-AP

Description:

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V 600V TO-226-3, TO-92-3 (TO-226AA)

Quantity:

In Stock : 999

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Product Details

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STQ1HNK60R-AP Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 156pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain current is 0.4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.A normal operation of the DS requires keeping the breakdown voltage above 600V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STQ1HNK60R-AP Features


the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 500mA
the turn-off delay time is 19 ns
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)

STQ1HNK60R-AP Applications


There are a lot of STMicroelectronics STQ1HNK60R-AP applications of single MOSFETs transistors.

  • LCD/LED/ PDP TV Lighting
  • Motor drives and Uninterruptible Power Supplies
  • Battery Protection Circuit
  • Micro Solar Inverter
  • Synchronous Rectification
  • Solar Inverter
  • Consumer Appliances
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • AC-DC Power Supply
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STQ1HNK60R-AP

technical specifications, attributes, parameters and parts with similar specifications to STQ1HNK60R-AP.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Box (TB)

  • Series

    SuperMESH™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Base Part Number

    STQ1

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    3W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3W

  • Turn On Delay Time

    6.5 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    8.5 Ω @ 500mA, 10V

  • Vgs(th) (Max) @ Id

    3.7V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    156pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    400mA Tc

  • Gate Charge (Qg) (Max) @ Vgs

    10nC @ 10V

  • Rise Time

    5ns

  • Drain to Source Voltage (Vdss)

    600V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    25 ns

  • Turn-Off Delay Time

    19 ns

  • Continuous Drain Current (ID)

    500mA

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    30V

  • Drain Current-Max (Abs) (ID)

    0.4A

  • DS Breakdown Voltage-Min

    600V

  • Avalanche Energy Rating (Eas)

    25 mJ

  • Height

    4.95mm

  • Length

    4.95mm

  • Width

    3.94mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Factory Lead Time

    8 Weeks

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