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  • STV270N4F3

STV270N4F3

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Manufacturer No:

STV270N4F3

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STV270N4F3

Package:

PowerSO-10 Exposed Bottom Pad

Datasheet:

STV270N4F3

Description:

STV270N4F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STV270N4F3 MOSFET Description


The STV270N4F3 MOSFET is built on STripFET III Power MOSFET technology, which is one of the most recent advancements and has been specifically tuned to minimize on-state resistance while delivering outstanding switching performance. The part has reduced conduction losses to a large extent and has a very low parasitic inductance thanks to its low profile.


    

STV270N4F3 MOSFET Features


State-of-the-art packaging

High reliability and safety

Conduction losses reduced

Low profile

Very low parasitic inductance



STV270N4F3 MOSFET Applications


Synchronous Rectification

UPS

Motor Control

SMPS

Power-Over-Ethernet (PoE)

Inverter

Automotive

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From $40.00 basic shipping fee depend on zone and country.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STV270N4F3

technical specifications, attributes, parameters and parts with similar specifications to STV270N4F3.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    PowerSO-10 Exposed Bottom Pad

  • Number of Pins

    10

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    STripFET™ III

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    10

  • ECCN Code

    EAR99

  • Resistance

    1.5MOhm

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    250

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STV270

  • Pin Count

    10

  • Number of Elements

    1

  • Power Dissipation-Max

    300W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    25 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.5m Ω @ 80A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    7500pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    270A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    150nC @ 10V

  • Rise Time

    180ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    45 ns

  • Turn-Off Delay Time

    110 ns

  • Continuous Drain Current (ID)

    270A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    40V

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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