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  • PSMN1R2-25YL,115

PSMN1R2-25YL,115

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Manufacturer No:

PSMN1R2-25YL,115

Manufacturer:

Nexperia USA Inc.

HK JDW NO:

554-PSMN1R2-25YL,115

Package:

SOT-1023, 4-LFPAK

Datasheet:

PSMN1R2-25YL,115

Description:

MOSFET (Metal Oxide) N-Channel Digi-Reel® 1.2m Ω @ 15A, 10V ±20V 6380pF @ 12V 105nC @ 10V SOT-1023, 4-LFPAK

Quantity:

In Stock : 999

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Product Details

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PSMN1R2-25YL,115 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 677 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6380pF @ 12V.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 815A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 69 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.By using 25V, it can supply the maximum voltage from two sources.In this case, the threshold voltage of the transistor is 1.7V, which means that it will not activate any of its functions when its threshold voltage reaches 1.7V.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

PSMN1R2-25YL,115 Features


the avalanche energy rating (Eas) is 677 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 815A.
a threshold voltage of 1.7V

PSMN1R2-25YL,115 Applications


There are a lot of Nexperia USA Inc. PSMN1R2-25YL,115 applications of single MOSFETs transistors.

  • Motor control
  • Industrial Power Supplies
  • Motor drives and Uninterruptible Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • Battery Protection Circuit
  • General Purpose Interfacing Switch
  • Solar Inverter
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Telecom 1 Sever Power Supplies
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

PSMN1R2-25YL,115

technical specifications, attributes, parameters and parts with similar specifications to PSMN1R2-25YL,115.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    SOT-1023, 4-LFPAK

  • Surface Mount

    YES

  • Number of Pins

    4

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Digi-Reel®

  • Published

    2014

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    4

  • ECCN Code

    EAR99

  • Resistance

    1.2MOhm

  • Terminal Finish

    Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Pin Count

    4

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    121W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    121W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    69 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.2m Ω @ 15A, 10V

  • Vgs(th) (Max) @ Id

    2.15V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    6380pF @ 12V

  • Current - Continuous Drain (Id) @ 25°C

    100A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    105nC @ 10V

  • Rise Time

    125ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    56 ns

  • Turn-Off Delay Time

    94 ns

  • Continuous Drain Current (ID)

    100A

  • Threshold Voltage

    1.7V

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    25V

  • Drain to Source Breakdown Voltage

    25V

  • Pulsed Drain Current-Max (IDM)

    815A

  • Avalanche Energy Rating (Eas)

    677 mJ

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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