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NTMD3P03R2G

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Manufacturer No:

NTMD3P03R2G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTMD3P03R2G

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

NTMD3P03R2G

Description:

NTMD3P03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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NTMD3P03R2G   Description


 P-channel MOSFET is a type of MOSFET, in which the channel of MOSFET consists of most of the holes as current carriers. When the MOSFET is activated and turned on, most of the current flowing through the channel is a hole.


NTMD3P03R2G    Features


? High Efficiency Components in a Dual SOIC?8 Package

? High Density Power MOSFET with Low RDS(on)

? Miniature SOIC?8 Surface Mount Package ? Saves Board Space

? Diode Exhibits High Speed with Soft Recovery

? IDSS Specified at Elevated Temperature

? Avalanche Energy Specified

? Mounting Information for the SOIC?8 Package is Provided

? AEC?Q101 Qualified ? NVMD3P03R2G

? These Devices are Pb?Free and are RoHS Compliant


NTMD3P03R2G    Applications


? DC?DC Converters

? Low Voltage Motor Control

? Power Management in Portable and Battery?Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

 

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTMD3P03R2G

technical specifications, attributes, parameters and parts with similar specifications to NTMD3P03R2G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Resistance

    85MOhm

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -30V

  • Max Power Dissipation

    2W

  • Terminal Form

    GULL WING

  • Current Rating

    -3.05A

  • Base Part Number

    NTMD3P03

  • Pin Count

    8

  • Number of Elements

    2

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2W

  • Turn On Delay Time

    16 ns

  • Power - Max

    730mW

  • FET Type

    2 P-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    85m Ω @ 3.05A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    750pF @ 24V

  • Current - Continuous Drain (Id) @ 25°C

    2.34A

  • Gate Charge (Qg) (Max) @ Vgs

    25nC @ 10V

  • Rise Time

    16ns

  • Drain to Source Voltage (Vdss)

    30V

  • Fall Time (Typ)

    45 ns

  • Turn-Off Delay Time

    45 ns

  • Continuous Drain Current (ID)

    -3.05A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    -30V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    -1.7 V

  • Feedback Cap-Max (Crss)

    135 pF

  • Height

    1.5mm

  • Length

    5mm

  • Width

    4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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