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NTLJD3115PT1G
NTLJD3115PT1G
598-NTLJD3115PT1G
6-WDFN Exposed Pad
NTLJD3115PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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NTLJD3115PT1G Description
This P-Channel -1.8V specified MOSFET is produced by Fairchild using their state-of-the-art low voltage PowerTrench technology. It has been tuned for battery power management applications. This innovation makes an effort to boost avalanche energy, dv/dt rate, conduction loss, and switching performance.
NTLJD3115PT1G Features
? Exposed Drain Pad for Excellent Thermal Conduction is Provided by the WDFN Package
? Footprint of 2x2 mm similar to SC 88
? 2x2 mm Package with Lowest RDS(on)
? Operation at Low Voltage Gate Drive Logic Level: 1.8 V RDS(on) Rating
? Low Profile for Easy Fit in Thin Environments ( 0.8 mm)
? Configuration of Bidirectional Current Flow with Common Source
? This device is lead-free.
NTLJD3115PT1G Applications
? Application-Specific Optimization for Battery and Load Management
? Portable Resources
? Circuits for Li-Ion battery charging and protection
? High Side Switch Load
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NTLJD3115PT1G
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