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NDS9953A
NDS9953A
598-NDS9953A
8-SOIC (0.154, 3.90mm Width)
NDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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NDS9953A Description
These P-Channel enhanced power field effect transistors are produced using Xiantong's proprietary high cell density DMOS technology. This high-density process is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
NDS9953A Features
-2.9A,-30VR=0.13@V=-10V.
High density cell design for extremely low Rpsion
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package
NDS9953A Applications
low-voltage applications
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NDS9953A
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