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MMDF2C03HDR2G

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Manufacturer No:

MMDF2C03HDR2G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MMDF2C03HDR2G

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

MMDF2C03HDR2G

Description:

MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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MMDF2C03HDR2G Description


These tiny surface-mount MOSFETs have full logic-level performance and an extremely low RDS(on). The drain-to-source diode has a very fast reverse recovery time, and they can sustain tremendous energy in the avalanche and commutation modes. Power efficiency is a key consideration when using these devices in low voltage, high speed switching applications. Dc-dc converters and power management are typical uses in portable and battery-powered items including computers, printers, cellular and cordless phones. Additionally, they can be utilized to control low voltage motors in mass storage items like disk drives and tape drives. In designs where inductive loads are switched, the avalanche energy is defined to remove any uncertainty and provide additional protection against unforeseen voltage transients.



MMDF2C03HDR2G Features


? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)


? Logic ICs Can Drive the Logic Level Gate Drive


? Saves Board Space with Miniature SO-8 Surface Mount Package


? Bridge Circuit Use of Diodes Is Typical


? Diode Demonstrates Fast, Soft Recovery


? At Elevated Temperature, IDSS is Specified


? Specified Avalanche Energy


? Provided Mounting Instructions for SO-8 Package


? This device is lead-free.



MMDF2C03HDR2G Applications


Switching applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MMDF2C03HDR2G

technical specifications, attributes, parameters and parts with similar specifications to MMDF2C03HDR2G.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    OBSOLETE (Last Updated: 1 week ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    30V

  • Max Power Dissipation

    2W

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Reach Compliance Code

    unknown

  • Current Rating

    2A

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    MMDF2C03HD

  • Pin Count

    8

  • Qualification Status

    Not Qualified

  • Number of Elements

    2

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2W

  • FET Type

    N and P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    70m Ω @ 3A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    630pF @ 24V

  • Current - Continuous Drain (Id) @ 25°C

    4.1A 3A

  • Gate Charge (Qg) (Max) @ Vgs

    16nC @ 10V

  • Rise Time

    18ns

  • Polarity/Channel Type

    N-CHANNEL AND P-CHANNEL

  • Fall Time (Typ)

    194 ns

  • Turn-Off Delay Time

    81 ns

  • Continuous Drain Current (ID)

    4.1A

  • Threshold Voltage

    1.7V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain-source On Resistance-Max

    0.07Ohm

  • Drain to Source Breakdown Voltage

    30V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

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