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MBRA1H100T3G

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Manufacturer No:

MBRA1H100T3G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MBRA1H100T3G

Package:

DO-214AC, SMA

Datasheet:

MBRA1H100T3G

Description:

MBRA1H100T3G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 2332

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Product Details

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Product Description:

The MBRA1H100T3G is a high-performance Schottky diode designed to provide efficient rectification and voltage regulation in various electronic circuits. This diode offers excellent power handling capabilities and low forward voltage drop, making it suitable for applications where energy efficiency and low power losses are crucial.


Features:


High Efficiency: The MBRA1H100T3G Schottky diode is engineered for high efficiency, enabling efficient conversion of electrical energy with minimal power losses.


Low Forward Voltage Drop: With its low forward voltage drop, this diode reduces energy loss during rectification, contributing to higher overall system efficiency.


Fast Switching Speed: The diode exhibits fast switching characteristics, making it suitable for applications that require rapid response times.


High Power Handling: The MBRA1H100T3G can handle relatively high power levels, allowing it to manage significant current flows without degradation in performance.


Robust Construction: Designed with robust materials and construction, this diode offers enhanced durability and reliability in various operating conditions.


Applications:

The MBRA1H100T3G Schottky diode finds versatile applications in electronic circuits and systems, including:


Rectification: It is commonly used for rectification purposes in power supplies, voltage regulators, and DC-DC converters, ensuring efficient conversion of AC to DC voltage.


Voltage Regulation: The diode's low forward voltage drop makes it suitable for voltage regulation tasks, maintaining a stable output voltage in various power management circuits.


Switching Circuits: Its fast switching speed makes it ideal for use in switching circuits, such as high-frequency signal rectification and pulse circuits.


Reverse Polarity Protection: The diode is employed to provide reverse polarity protection in circuits, preventing damage due to incorrect battery or power connections.


Energy Harvesting: The efficient characteristics of the MBRA1H100T3G make it suitable for energy harvesting applications, where it can help capture and convert ambient energy into usable power.


In summary, the MBRA1H100T3G Schottky diode is a versatile and efficient component for rectification, voltage regulation, switching, and protection in electronic circuits. Its low forward voltage drop, fast switching speed, and robust design make it well-suited for a variety of applications that require high-performance energy conversion and efficient power management.






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The following are some common countries' logistic time.

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Payment Method

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UPS(www.ups.com)
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FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MBRA1H100T3G

technical specifications, attributes, parameters and parts with similar specifications to MBRA1H100T3G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Max Operating Temperature

    175°C

  • Min Operating Temperature

    -65°C

  • Length

    4.57mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Radiation Hardening

    No

  • Number of Pins

    2

  • Package / Case

    DO-214AC, SMA

  • Height

    2mm

  • Width

    2.92mm

  • Mounting Type

    Surface Mount

  • HTS Code

    8541.10.00.80

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    J BEND

  • Base Part Number

    MBRA1H100

  • Pin Count

    2

  • Surface Mount

    YES

  • Diode Element Material

    SILICON

  • Number of Elements

    1

  • Diode Type

    Schottky

  • Output Current-Max

    1A

  • Forward Current

    1A

  • Forward Voltage

    840mV

  • Halogen Free

    Halogen Free

  • Element Configuration

    Single

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Current - Reverse Leakage @ Vr

    40μA @ 100V

  • Voltage - Forward (Vf) (Max) @ If

    760mV @ 1A

  • Operating Temperature - Junction

    -65°C~175°C

  • Max Reverse Voltage (DC)

    100V

  • Average Rectified Current

    1A

  • Peak Reverse Current

    4μA

  • Max Repetitive Reverse Voltage (Vrrm)

    100V

  • Peak Non-Repetitive Surge Current

    50A

  • Max Forward Surge Current (Ifsm)

    50A

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United Kingdom/GBP Summary
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