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  • IRFP260NPBF

IRFP260NPBF

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Manufacturer No:

IRFP260NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFP260NPBF

Package:

TO-247-3

Datasheet:

IRFP260NPBF

Description:

MOSFET (Metal Oxide) N-Channel Bulk 40m Ω @ 28A, 10V ±20V 4057pF @ 25V 234nC @ 10V TO-247-3

Quantity:

In Stock : 5708

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Product Details

Purchasing and Inquiry

IRFP260NPBF Description


The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. The IRFP260NPBF features extremely low on-resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements, and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.



IRFP260NPBF Features


  • Advanced Process Technology

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Ease of Paralleling

  • Simple Drive Requirements



IRFP260NPBF Applications


  • DC motors

  • Inverters

  • SMPS

  • Lighting

  • Load switches 

  • Battery-powered applications


1. Purchase

You can send an inquiry by email, or add the item to the RFQ list and submit it to us.
Tell us the model and quantity you need, our sales staff will reply the price in time.
EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

3. RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFP260NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFP260NPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Bulk

  • Published

    2004

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Resistance

    40mOhm

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    250

  • Current Rating

    50A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Number of Elements

    1

  • Power Dissipation-Max

    300W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    17 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    40m Ω @ 28A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    4057pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    50A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    234nC @ 10V

  • Rise Time

    60ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    48 ns

  • Turn-Off Delay Time

    55 ns

  • Continuous Drain Current (ID)

    50A

  • Threshold Voltage

    4V

  • JEDEC-95 Code

    TO-247AC

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    200V

  • Pulsed Drain Current-Max (IDM)

    200A

  • Dual Supply Voltage

    200V

  • Avalanche Energy Rating (Eas)

    560 mJ

  • Recovery Time

    402 ns

  • Nominal Vgs

    4 V

  • Height

    20.2946mm

  • Length

    15.875mm

  • Width

    5.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

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