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IRF6893MTRPBF
IRF6893MTRPBF
376-IRF6893MTRPBF
DirectFET™ Isometric MX
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6m Ω @ 29A, 10V ±16V 3480pF @ 13V 38nC @ 4.5V DirectFET™ Isometric MX
In Stock : 999
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Product Details
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IRF6893MTRPBF Overview
A device's maximum input capacitance is 3480pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 29A for this device. Drain current refers to the capacity of the device to conduct continuous current.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6893MTRPBF Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 19 ns
IRF6893MTRPBF Applications
There are a lot of Infineon Technologies IRF6893MTRPBF applications of single MOSFETs transistors.
- PFC stages, hard switching PWM stages and resonant switching
- Battery Protection Circuit
- Lighting, Server, Telecom and UPS.
- Load switching
- Industrial Power Supplies
- Power Tools
- Micro Solar Inverter
- DC-to-DC converters
- Server power supplies
- Motor drives and Uninterruptible Power Supplies
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IRF6893MTRPBF
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