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IRF6635TR1PBF

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Manufacturer No:

IRF6635TR1PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF6635TR1PBF

Package:

DirectFET™ Isometric MX

Datasheet:

IRF6635TR1PBF

Description:

IRF6635TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRF6635TR1PBF Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications



IRF6635TR1PBF Features

High-density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.



IRF6635TR1PBF Applications

DC/DC converters



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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF6635TR1PBF

technical specifications, attributes, parameters and parts with similar specifications to IRF6635TR1PBF.

  • Type
    Parameter
    Select All
  • Turn On Delay Time

    21 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    1.8mOhm @ 32A, 10V

  • Vgs(th) (Max) @ Id

    2.35V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5970pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    32A Ta 180A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    71nC @ 4.5V

  • Rise Time

    13ns

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    8.3 ns

  • Turn-Off Delay Time

    33 ns

  • Continuous Drain Current (ID)

    25A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Dual Supply Voltage

    30V

  • Input Capacitance

    5.97nF

  • Drain to Source Resistance

    2.4mOhm

  • Rds On Max

    1.8 mΩ

  • Nominal Vgs

    1.8 V

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    DirectFET™ Isometric MX

  • Number of Pins

    5

  • Supplier Device Package

    DIRECTFET™ MX

  • Operating Temperature

    -40°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • Series

    HEXFET®

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Termination

    SMD/SMT

  • Resistance

    1.8MOhm

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -40°C

  • Voltage - Rated DC

    30V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    32A

  • Number of Elements

    1

  • Power Dissipation-Max

    2.8W Ta 89W Tc

  • Power Dissipation

    89W

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