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IRF640PBF

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Manufacturer No:

IRF640PBF

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-IRF640PBF

Package:

TO-220-3

Datasheet:

IRF640PBF

Description:

MOSFET (Metal Oxide) N-Channel Bulk 180mOhm @ 11A, 10V ±20V 1300pF @ 25V 70nC @ 10V 200V TO-220-3

Quantity:

In Stock : 999

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IRF640PBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF640PBF Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)

IRF640PBF Applications


There are a lot of Vishay Siliconix IRF640PBF applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Motor control
  • Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Power Management Functions
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Solar Inverter
  • Load switching
  • LCD/LED/ PDP TV Lighting
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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF640PBF

technical specifications, attributes, parameters and parts with similar specifications to IRF640PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Supplier Device Package

    TO-220AB

  • Weight

    6.000006g

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2014

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Resistance

    180mOhm

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -55°C

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    18A

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    125W Tc

  • Element Configuration

    Single

  • Power Dissipation

    125W

  • Turn On Delay Time

    14 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    180mOhm @ 11A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1300pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    18A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    70nC @ 10V

  • Rise Time

    51ns

  • Drain to Source Voltage (Vdss)

    200V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    36 ns

  • Turn-Off Delay Time

    45 ns

  • Continuous Drain Current (ID)

    18A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    200V

  • Input Capacitance

    1.3nF

  • Drain to Source Resistance

    180mOhm

  • Rds On Max

    180 mΩ

  • Nominal Vgs

    2 V

  • Height

    9.01mm

  • Length

    10.41mm

  • Width

    4.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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