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IRFP450PBF

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Manufacturer No:

IRFP450PBF

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-IRFP450PBF

Package:

TO-247-3

Datasheet:

IRFP450PBF

Description:

IRFP450PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFP450PBF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 760 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2600pF @ 25V maximal input capacitance.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.Its turn-off delay time is 92 ns, which is the time to charge the device's input capacitance before drain current conduction begins.As far as peak drain current is concerned, its maximum pulsed current is 56A.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP450PBF Features


the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V

IRFP450PBF Applications


There are a lot of Vishay Siliconix IRFP450PBF applications of single MOSFETs transistors.

  • Server power supplies
  • Power Management Functions
  • Battery Protection Circuit
  • Motor control
  • Motor Drives and Uninterruptible Power Supples
  • DC/DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Telecom 1 Sever Power Supplies
  • Consumer Appliances
  • AC-DC Power Supply
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFP450PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFP450PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Weight

    38.000013g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2011

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • Resistance

    400mOhm

  • Additional Feature

    AVALANCHE RATED

  • Voltage - Rated DC

    500V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    14A

  • Pin Count

    3

  • Lead Pitch

    5.45mm

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    190W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    190W

  • Turn On Delay Time

    17 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    400m Ω @ 8.4A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2600pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    14A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    150nC @ 10V

  • Rise Time

    47ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    44 ns

  • Turn-Off Delay Time

    92 ns

  • Continuous Drain Current (ID)

    14A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    500V

  • Pulsed Drain Current-Max (IDM)

    56A

  • Dual Supply Voltage

    500V

  • Avalanche Energy Rating (Eas)

    760 mJ

  • Recovery Time

    810 ns

  • Max Junction Temperature (Tj)

    150°C

  • Nominal Vgs

    2 V

  • Height

    24.86mm

  • Length

    15.87mm

  • Width

    5.31mm

  • Radiation Hardening

    No

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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