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IRF520NSPBF

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Manufacturer No:

IRF520NSPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF520NSPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

-

Description:

MOSFET (Metal Oxide) N-Channel Tube 200m Ω @ 5.7A, 10V ±20V 330pF @ 25V 25nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock : 999

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Product Details

Purchasing and Inquiry

IRF520NSPBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 330pF @ 25V.This device conducts a continuous drain current (ID) of 9.7A, which is the maximum continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF520NSPBF Features


a continuous drain current (ID) of 9.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V

IRF520NSPBF Applications


There are a lot of Infineon Technologies IRF520NSPBF applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • AC-DC Power Supply
  • Motor control
  • Battery Protection Circuit
  • Server power supplies
  • Synchronous Rectification
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Lighting, Server, Telecom and UPS.
  • Industrial Power Supplies
1. Purchase

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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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3. RFQ (Request for Quotations)

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4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF520NSPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF520NSPBF.

  • Type
    Parameter
    Select All
  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Packaging

    Tube

  • Published

    2004

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Discontinued

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    200mOhm

  • Max Operating Temperature

    175°C

  • Min Operating Temperature

    -55°C

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    9.7A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    3.8W Ta 48W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    48W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    4.5 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    200m Ω @ 5.7A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    330pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    9.7A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    25nC @ 10V

  • Rise Time

    23ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    23 ns

  • Turn-Off Delay Time

    32 ns

  • Continuous Drain Current (ID)

    9.7A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    100V

  • Recovery Time

    150 ns

  • Nominal Vgs

    4 V

  • Height

    4.826mm

  • Length

    10.668mm

  • Width

    10.16mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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