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FS450R12KE3BOSA1
FS450R12KE3BOSA1
376-FS450R12KE3BOSA1
Module
FS450R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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FS450R12KE3BOSA1 Description
FS450R12KE3BOSA1 is a 1200v -EconoPACK+ with trench/fieldstop IGBT3 and Emitter Controlled High-Efficiency diode. The FS450R12KE3BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Wireless infrastructure, Enterprise systems, and Enterprise projectors due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS450R12KE3BOSA1 is in the tray package with 2100W Power dissipation.
FS450R12KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 600A
Repetitive peak collector current Tp = 1 ms: 900A
Total power dissipation Tc = 25°C: 2100W
Gate-emitter peak voltage: ±20V
FS450R12KE3BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Wireless infrastructure
Enterprise systems
Enterprise projectors
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FS450R12KE3BOSA1
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