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  • FDMS8090

FDMS8090

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Manufacturer No:

FDMS8090

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMS8090

Package:

8-PowerWDFN

Datasheet:

FDMS8090

Description:

FDMS8090 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDMS8090               Description

 

This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.

 

FDMS8090                      Features

 

Max rDS(on) = 13 m|? at VGS = 10 V, ID = 10 A

Max rDS(on) = 20 m|? at VGS = 6 V, ID = 8 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

100% UIL tested

RoHS Compliant


FDMS8090                  Applications


DC-DC Merchant Power Supply

 






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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMS8090

technical specifications, attributes, parameters and parts with similar specifications to FDMS8090.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 6 days ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerWDFN

  • Number of Pins

    8

  • Weight

    250mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • Series

    PowerTrench®

  • JESD-609 Code

    e4

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    4

  • ECCN Code

    EAR99

  • Terminal Finish

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Subcategory

    FET General Purpose Power

  • Max Power Dissipation

    2.2W

  • JESD-30 Code

    R-PDSO-N4

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    59W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    10.6 ns

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    13m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1800pF @ 50V

  • Gate Charge (Qg) (Max) @ Vgs

    27nC @ 10V

  • Rise Time

    4.6ns

  • Drain to Source Voltage (Vdss)

    100V

  • Fall Time (Typ)

    4 ns

  • Turn-Off Delay Time

    17.4 ns

  • Continuous Drain Current (ID)

    10A

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    40A

  • Drain-source On Resistance-Max

    0.013Ohm

  • Drain to Source Breakdown Voltage

    100V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Height

    750μm

  • Length

    5mm

  • Width

    6mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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