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FDMD84100
FDMD84100
598-FDMD84100
8-PowerWDFN
FDMD84100 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
FDMD84100 Description
This package combines two N-Channel devices that are figuratively joined ternally in communication. This makes it possible for very low package parasitics and an improved thermal path to the bottom-mounted communication source pad. for increased power density, has a very tiny footprint (3.3 x 5 mm).
FDMD84100 Features
Maximum DS(on) at Vq = 10 V and Ip = 7 A is 20 mQ.
Max gs(on) is 32 mQ at 6 V, lD, and VGS.
Ideal for synchronous secondary side layout flexibility
"Termination is lead-free and compliant with RoHS."
100% of UILs were tested.
FDMD84100 Applications
Synchronous Rectifiers, Isolated DC-DC
switches with same ground loads
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FDMD84100
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