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  • FDMC8030

FDMC8030

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Manufacturer No:

FDMC8030

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMC8030

Package:

8-PowerWDFN

Datasheet:

FDMC8030

Description:

FDMC8030 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDMC8030 Description

FDMC8030 is a dual N-channel Power Trench MOSFET. The onsemi FDMC8030 includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. The N-channel Power Trench MOSFET FDMC8030 can be applied in Server applications due to the following features. And its ideal operating temperature is between -55 and +150℃.

FDMC8030 Features

Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
Termination is Lead-free and RoHS Compliant
In Power-33-8 package

FDMC8030 Applications

Server
Battery Protection
Load Switching
Point of Load
portable electronics
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Payment Method

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The fee is charged according to the rule of PayPal.
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UPS(www.ups.com)
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMC8030

technical specifications, attributes, parameters and parts with similar specifications to FDMC8030.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    7 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 hours ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerWDFN

  • Number of Pins

    8

  • Weight

    196mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2007

  • Series

    PowerTrench®

  • JESD-609 Code

    e4

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Additional Feature

    AVALANCHE RATED

  • Max Power Dissipation

    800mW

  • Number of Elements

    1

  • Number of Channels

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.9W

  • Case Connection

    DRAIN SOURCE

  • Turn On Delay Time

    7 ns

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    10m Ω @ 12A, 10V

  • Vgs(th) (Max) @ Id

    2.8V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1975pF @ 20V

  • Gate Charge (Qg) (Max) @ Vgs

    30nC @ 10V

  • Rise Time

    3ns

  • Drain to Source Voltage (Vdss)

    40V

  • Fall Time (Typ)

    3 ns

  • Turn-Off Delay Time

    19 ns

  • Continuous Drain Current (ID)

    12A

  • Threshold Voltage

    1.5V

  • Gate to Source Voltage (Vgs)

    12V

  • Drain to Source Breakdown Voltage

    40V

  • Pulsed Drain Current-Max (IDM)

    50A

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Max Junction Temperature (Tj)

    150°C

  • FET Feature

    Logic Level Gate

  • Feedback Cap-Max (Crss)

    30 pF

  • Height

    800μm

  • Length

    3mm

  • Width

    3mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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