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FDG6313N
FDG6313N
598-FDG6313N
6-TSSOP, SC-88, SOT-363
FDG6313N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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FDG6313N Description
The dual N-Channel logic level enhancement mode field effect transistors in question were created using the high cell density, DMOS technology that is exclusive to Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. In place of small signal MOSFETs and bipolar digital transistors, this device was created specifically for low voltage applications.
FDG6313N Features
Very low level gate drive needs (VGS(th) 1.5 V) enable direct operation in 3 V circuits.
For ESD robustness (>6kV human body model), use a gate-source zener.
compact SC70-6 surface mount package, which is industry standard.
FDG6313N Applications
Switching applications
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FDG6313N
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