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FDG6303N
FDG6303N
598-FDG6303N
6-TSSOP, SC-88, SOT-363
FDG6303N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
FDG6303N Dual N-Channel, Digital FET in 6-TSSOP, SC-88, SOT-363 packages is manufactured by On Semiconductor. It’s unique DMOS technology is used to make these dual N-Channel logic level enhancement mode field effect transistors. This extremely dense technique is specifically designed to reduce on-state resistance. On Semiconductor FDG6303N was created as a replacement for bipolar digital transistors and small signal MOSFETs in low-voltage applications. More information please see FDG6303N datasheet
FDG6303N Features
25 V, 0.50 A continuous, 1.5 A peak.
RDS(ON) = 0.45 W @ VGS= 4.5 V,
RDS(ON) =0.60 W @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
FDG6303N Applications
This product is general usage and suitable for many different applications.
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Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
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FDG6303N
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