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FDG6301N
FDG6301N
598-FDG6301N
6-TSSOP, SC-88, SOT-363
FDG6301N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
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FDG6301N MOSFET Description
Onsemi's patented, high cell density, DMOS technology is used to manufacture the FDG6301N dual N-Channel logic level enhancement MOSFET. This ultra-high-density technique is specifically designed to reduce on-state resistance. This device was created to replace bipolar digital transistors and tiny signal MOSFETs in low voltage applications. The FDG6301N MOSFET is widely renowned for its low drain-on-resistance and durable ESD architecture.
FDG6301N MOSFET Features
25 V, 0.22 A continuous, 0.65 A peak
Low RDS(ON) = 4 Ω @ VGS= 4.5 V
Very low-level gate drive requirements allow direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
Compact industry standard SC70-6 surface mount package
FDG6301N MOSFET Applications
High Current, High-Speed Switching
Up to 12s Battery Power Tools
Buck Converters
Power Converters with Multi-Megahertz Operation
Three-Phase Bridge for Brushless DC Motor Control
Lighting Applications
Other Half and Full-Bridge Topologies
Off-Line Power Supplies
PFC Controllers
Adapters
Battery Management
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FDG6301N
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