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FDC6401N
FDC6401N
598-FDC6401N
SOT-23-6 Thin, TSOT-23-6
FDC6401N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDC6401N MOSFET Description
The FDC6401N MOSFET has a Drain-Source voltage of 20 V (max) so it is suitable for switching low to medium power loads. It is capsuled within the TSOT-23 6-pin package and is able to operate over -500~150 ℃. It is specified with low input capacitance so it provides credible dynamic performance, too.
FDC6401N MOSFET Features
Low gate charge
RDS(ON) = 95 mΩ @ VGS = 2.5 V
3.0 A, 20 V
High power and current handling capability
RDS(ON) = 70 mΩ @ VGS = 4.5 V
High-performance trench technology for extremely low RDS(on)
FDC6401N MOSFET Applications
Power Management
Battery Protection
DC/DC Converter
Switching
Servo Control
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FDC6401N
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