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  • FDC6333C

FDC6333C

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Manufacturer No:

FDC6333C

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDC6333C

Package:

SOT-23-6 Thin, TSOT-23-6

Datasheet:

FDC6333C

Description:

FDC6333C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDC6333C Description


The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.



FDC6333C Features


  • Q1 2.5 A, 30V

  • RDS(on) = 95 mΩ@ VGS = 10 V

  • RDS(on) = 150 mΩ @ VGS = 4.5 V

  • Q2 –2.0 A, 30V.

  • RDS(on) = 150 mΩ@ VGS = -10 V

  • RDS(on) = 220 mΩ @ VGS = -4.5 V

  • Low gate charge

  • High-performance trench technology for extremely low RDS(ON)

  • SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).



FDC6333C Applications


  • Industrial

  • Power Management

  • DC/DC converter

  • Load switch

  • LCD display inverter


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
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Shipping

DHL(www.dhl.com)
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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDC6333C

technical specifications, attributes, parameters and parts with similar specifications to FDC6333C.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    SOT-23-6 Thin, TSOT-23-6

  • Number of Pins

    6

  • Weight

    36mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • Series

    PowerTrench®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Resistance

    95MOhm

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    960mW

  • Terminal Form

    GULL WING

  • Current Rating

    2.5A

  • Number of Elements

    2

  • Number of Channels

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    960mW

  • Turn On Delay Time

    4.5 ns

  • Power - Max

    700mW

  • FET Type

    N and P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    95m Ω @ 2.5A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    282pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    2.5A 2A

  • Gate Charge (Qg) (Max) @ Vgs

    6.6nC @ 10V

  • Rise Time

    13ns

  • Drain to Source Voltage (Vdss)

    30V

  • Polarity/Channel Type

    N-CHANNEL AND P-CHANNEL

  • Fall Time (Typ)

    13 ns

  • Turn-Off Delay Time

    11 ns

  • Continuous Drain Current (ID)

    2.5A

  • Threshold Voltage

    1.8V

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    -30V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Max Junction Temperature (Tj)

    150°C

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    1.8 V

  • Height

    1mm

  • Length

    3mm

  • Width

    1.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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