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FDC6322C
FDC6322C
598-FDC6322C
SOT-23-6 Thin, TSOT-23-6
FDC6322C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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FDC6322C Description
These dual N & P Channel logic level enhancement mode field effective transistors are made utilizing a high cell density DMOS process that is exclusive to Fairchild. This extremely dense method has been specifically designed to reduce on-state resistance. In order to replace bipolar digital transistors in load switching applications, the device has an optimized design specifically for low voltage applications. This dual digital FET can replace many digital transistors with different bias resistors because bias resistors are not necessary.
FDC6322C Features
N-Ch 25 V, 0.22 A, 5 W at 2.7 V VGS(ON)
P-Ch 25 V, -0.46 A, 1.5 W @ -2.7 V, RDS(ON).
Direct operation in 3 V circuits is made possible by the extremely low level gate drive requirements. 1.5 V for VGS(th).
For ESD toughness, use a Gate-Source Zener. >6kV Human Body Model
Replace the digital transistors PNP and NPN.
FDC6322C Applications
Switching applications
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FDC6322C
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