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  • CSD19537Q3

CSD19537Q3

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Manufacturer No:

CSD19537Q3

Manufacturer:

HK JDW NO:

815-CSD19537Q3

Package:

8-PowerVDFN

Datasheet:

CSD19537Q3

Description:

CSD19537Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD19537Q3

technical specifications, attributes, parameters and parts with similar specifications to CSD19537Q3.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 5 days ago)

  • Contact Plating

    Copper, Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerVDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Additional Feature

    AVALANCHE RATED

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    NO LEAD

  • Reach Compliance Code

    not_compliant

  • Base Part Number

    CSD19537

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Number of Channels

    1

  • Power Dissipation-Max

    2.8W Ta 83W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.8W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    5 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    14.5m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    3.6V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1680pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    50A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    21nC @ 10V

  • Rise Time

    3ns

  • Drive Voltage (Max Rds On,Min Rds On)

    6V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    3 ns

  • Turn-Off Delay Time

    10 ns

  • Continuous Drain Current (ID)

    9.7A

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    100V

  • Avalanche Energy Rating (Eas)

    55 mJ

  • Max Junction Temperature (Tj)

    150°C

  • Height

    1.1mm

  • Length

    3.3mm

  • Width

    3.3mm

  • Thickness

    1mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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