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CSD16301Q2

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Manufacturer No:

CSD16301Q2

Manufacturer:

Texas Instruments

HK JDW NO:

815-CSD16301Q2

Package:

6-SMD, Flat Leads

Datasheet:

-

Description:

CSD16301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at HK JDW CSD16301Q2 Single, 29mΩ, 25V, N-Channel NexFET™ Power MOSFET in 2mm x 2mm SON Package

Quantity:

In Stock : 999

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Product Details

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CSD16301Q2 Description

The CSD16301Q2 is a NexFET? N-channel Power MOSFET designed to minimize losses in power conversion and load management applications, and optimized for 5V gate drive applications.The 2-mm×2-mm SON package offers excellent thermal performance for the size of the package.
CSD16301Q2 Features

Ultra-low Qg and Qgd
Low thermal resistance
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range

CSD16301Q2 Applications

DC-DC Converters
Battery and Load Management Applications

Power Management
Industrial
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD16301Q2

technical specifications, attributes, parameters and parts with similar specifications to CSD16301Q2.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Length

    2mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Radiation Hardening

    No

  • Number of Pins

    6

  • Package / Case

    6-SMD, Flat Leads

  • REACH SVHC

    No SVHC

  • Height

    800μm

  • Width

    2mm

  • Thickness

    750μm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e4

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Position

    DUAL

  • Peak Reflow Temperature (Cel)

    260

  • Base Part Number

    CSD16301

  • Pin Count

    6

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    2.3W

  • Turn On Delay Time

    2.7 ns

  • Threshold Voltage

    1.2V

  • Power Dissipation-Max

    2.3W Ta

  • Continuous Drain Current (ID)

    5A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Drain-source On Resistance-Max

    0.034Ohm

  • Turn-Off Delay Time

    4.1 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    24m Ω @ 4A, 8V

  • Vgs(th) (Max) @ Id

    1.55V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    340pF @ 12.5V

  • Gate Charge (Qg) (Max) @ Vgs

    2.8nC @ 4.5V

  • Rise Time

    4.4ns

  • Fall Time (Typ)

    1.7 ns

  • Gate to Source Voltage (Vgs)

    10V

  • Drain to Source Breakdown Voltage

    25V

  • Nominal Vgs

    1.2 V

  • Drain Current-Max (Abs) (ID)

    5A

  • Current - Continuous Drain (Id) @ 25°C

    5A Tc

  • Pulsed Drain Current-Max (IDM)

    20A

  • Drive Voltage (Max Rds On,Min Rds On)

    3V 8V

  • Vgs (Max)

    +10V, -8V

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