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BUB941ZT
BUB941ZT
761-BUB941ZT
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NPN - Darlington175°C TJ100μA1 Elements2 TerminationsSILICONTO-263-3, D2Pak (2 Leads + Tab), TO-263ABTubeSurface Mount
In Stock : 999
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Product Details
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BUB941ZT Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 5A 10V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.Continuous collector voltage should be kept at 15A for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
BUB941ZT Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
BUB941ZT Applications
There are a lot of STMicroelectronics BUB941ZT applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
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BUB941ZT
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